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Arsenic telluride target material and preparation method thereof

A technology of arsenic telluride and diarsenic telluride, which is applied in the field of arsenic telluride target material and its preparation, and can solve problems such as the use or preparation of arsenic telluride target material that has not been reported

Pending Publication Date: 2020-12-25
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] As a semiconductor material, arsenic telluride has the potential to be used in thin-film solar cells, but there is no report on the use or preparation of arsenic telluride targets in the industry

Method used

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  • Arsenic telluride target material and preparation method thereof

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preparation example Construction

[0019] The method for preparing an arsenic telluride target according to the first aspect of the present invention includes the following steps: step S1, mixing tellurium powder and arsenic powder to obtain a mixed powder; step S2, making the mixed powder in a nitrogen or inert gas atmosphere Two-stage heating and cooling to produce arsenic tritelluride; step S3, crushing and screening the arsenic tritelluride, and sintering the obtained arsenic tritelluride powder by vacuum hot pressing to produce arsenic tritelluride Target material; wherein, in step S2, the two-stage heating includes: in the first stage, heating the mixed powder to 200-300°C at a heating rate of 5-10°C / min, holding the temperature for 20-40min, and In the second stage, heating to 350-450°C at a heating rate of 5-10°C / min, and holding for 20-40min; in step S3, the temperature of the vacuum hot pressing sintering is 300-380°C, and the pressure is 35-50MPa.

[0020] The melting point of arsenic tritelluride is...

Embodiment 1

[0040] Step S1, uniformly mixing 5N tellurium powder with a particle size smaller than 100 mesh and 5N arsenic powder with a particle size smaller than 100 mesh according to a mass ratio of 1.5:1 to obtain a mixed powder;

[0041] Step S2, put the mixed powder into a tube furnace, continuously feed nitrogen or inert gas, and heat to 200°C at a heating rate of 5°C / min, keep it for 20 minutes, and then heat to 350°C at a heating rate of 5°C / min , keep warm for 20min, then cool with the furnace;

[0042] In step S3, the product of arsenic tritelluride synthesized in step S2 is crushed into powder by ball milling, passed through a 100-mesh sieve, and then the sieved arsenic tritelluride powder is put into a graphite mold, and sintered by vacuum hot pressing to obtain Arsenic telluride target;

[0043] Among them, the temperature of the vacuum hot pressing sintering is 300°C, the pressure is 35MPa, the pressure is started after holding the heat for 20-30min, the holding time is 30...

Embodiment 2

[0046] Step S1, uniformly mixing 5N tellurium powder with a particle size smaller than 100 mesh and 5N arsenic powder with a particle size smaller than 100 mesh according to a mass ratio of 1.7:1 to obtain a mixed powder;

[0047] Step S2, put the mixed powder into a tube furnace, continuously feed nitrogen or inert gas, and heat to 250°C at a heating rate of 7.5°C / min, keep it for 30min, and then heat to 400°C at a heating rate of 7.5°C / min , keep warm for 30min, then cool with the furnace;

[0048] In step S3, the product of arsenic tritelluride synthesized in step S2 is crushed into powder by ball milling, passed through a 100-mesh sieve, and then the sieved arsenic tritelluride powder is put into a graphite mold, and sintered by vacuum hot pressing to obtain Arsenic telluride target;

[0049] Among them, the temperature of vacuum hot pressing sintering is 340°C, the pressure is 42.5MPa, the pressure is started after holding the heat for 20-30min, the pressure holding time...

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Abstract

The invention provides an arsenic telluride target material and a preparation method thereof. The preparation method of the arsenic telluride target material comprises the following steps of: S1, mixing tellurium powder and arsenic powder to obtain mixed powder; S2, carrying out two-stage heating on the mixed powder in a nitrogen or inert gas atmosphere, and cooling to obtain arsenic tritelluride;and S3, crushing and screening the arsenic tritelluride, and carrying out vacuum hot-pressing sintering on the obtained arsenic tritelluride powder to obtain the arsenic telluride target material. The two-stage heating comprises a first stage and a second stage. In the first stage, the mixed powder is heated to 200-300 DEG C at a heating rate of 5-10 DEG C / min, and the temperature is kept for 20-40 minutes. In the second stage, the mixed powder is heated to to 350-450 DEG C at a heating rate of 5-10 DEG C / min, and the temperature is kept for 20-40 minutes. The temperature of vacuum hot-pressing sintering is 300-380 DEG C, and the pressure is 35-50 MPa. According to the preparation method disclosed by the invention, on the premise of ensuring the purity and density of the product, the lossof materials and the requirement on a mold can be reduced by using relatively low temperature and pressure.

Description

technical field [0001] The invention relates to the field of sputtering target preparation, in particular to an arsenic telluride target and a preparation method thereof. Background technique [0002] Since the 1990s, new devices and new materials in the microelectronics industry have developed rapidly. Electronics, magnetism, optics, optoelectronics and superconducting thin films have been widely used in high-tech and industrial fields, prompting the expansion of the sputtering target market. Today, the target material has flourished into a specialized industry. [0003] Common target preparation methods include vacuum melting, isostatic pressing, and hot pressing sintering. Among them, hot pressing sintering is widely used because of its simple process, low cost, and the ability to obtain a dense sintered body in a short period of time. [0004] As a semiconductor material, arsenic telluride has the potential to be applied to thin-film solar cells, but there is no report...

Claims

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Application Information

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IPC IPC(8): C04B35/515C04B35/622C04B35/645C23C14/34
CPCC04B35/547C04B35/622C04B35/645C04B2235/40C04B2235/42C04B2235/5427C04B2235/5436C04B2235/6581C23C14/3414
Inventor 王鹏飞曾成亮吴彩红文崇斌
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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