Connecting method of ZrB2-based ceramic

A connection method and ceramic technology, applied in the connection field of ZrB2-based ceramics, can solve the problems of uneven distribution of elements in the connection area, reduced grain growth of the ceramic matrix, poor structural integrity of the joint, etc. The effect of grain growth and rapid temperature rise

Inactive Publication Date: 2020-12-29
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Currently, applied to ZrB 2 -The reaction connection method of SiC ceramic connection is mainly based on hot pressing method. This method can effectively connect different ceramic components, but it takes a long time, the excessive growth of ceramic matrix grains reduces the strength, and the distribution of elements in the connection area is uneven. Joints Issues such as poor structural integrity remain elusive

Method used

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  • Connecting method of ZrB2-based ceramic
  • Connecting method of ZrB2-based ceramic
  • Connecting method of ZrB2-based ceramic

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Ni powder is used as brazing filler, and the thickness of the raw material is 50 μm, because of its ZrB 2 The diameter of the base ceramic matrix is ​​20mm, so the Ni powder is 15.7mg, and the powder particle size is 500nm; the Ni powder is dried in a vacuum oven for 10h; the ZrB is connected by the spark plasma sintering method. 2 -SiC ceramics, heated up to 1200°C at 50°C / min in a vacuum atmosphere, held for 30 minutes, cooled to 600°C at 25°C / min, and then cooled to room temperature with the furnace, and the pressure was set to 10MPa during the whole process. Under the same process parameters, ZrB was connected with SPS by HP method 2 base ceramics. The microstructure of the connected samples is as follows: figure 1 As shown, it can be clearly found that there are no obvious defects in the microscopic morphology of the joints obtained by the HP method and the SPS method, but on the joints, the grains of the joints connected by the SPS method are smaller, and it can...

Embodiment 2

[0030] Ni powder is used as brazing filler, the raw material thickness is 50μm, ZrB 2 The diameter of the base ceramic substrate is 20mm, the Ni powder is 15.7mg, and the Ni powder particle size is 500nm; the Ni powder is dried in a vacuum oven for 12h; the ZrB is connected by the spark plasma sintering method 2 The base ceramics were heated up to 1200°C at 50°C / min in a vacuum atmosphere, held for 25 minutes, cooled to 600°C at 25°C / min, and then cooled to room temperature with the furnace, and the pressure was set to 10MPa during the whole process. The element distribution of the connected sample is as follows figure 2 , as shown in 3, it can be clearly found that the element distribution of the joints obtained by the HP method and the SPS method is relatively uniform. However, in the joints connected by the HP method, the Ni element has obvious weak areas, from Figure three It can be seen that the elements of the joints connected by SPS are more uniform than those conne...

Embodiment 3

[0032] Ni powder is used as brazing filler, and the thickness of the raw material is 50 μm, because of its ZrB 2 The diameter of the base ceramic matrix is ​​20mm, so the Ni powder is 14.13mg, and the powder particle size is 500nm; the Ni powder is dried in a vacuum oven for 10h; the ZrB is connected by the spark plasma sintering method. 2 -SiC ceramics, heated up to 1200°C at 50°C / min in a vacuum atmosphere, held for 30 minutes, cooled to 600°C at 25°C / min, and then cooled to room temperature with the furnace, and the pressure was set to 10MPa during the whole process.

[0033] Example 3

[0034] Ni powder is used as brazing filler, and the thickness of the raw material is 45 μm, because of its ZrB 2 The diameter of the base ceramic matrix is ​​20mm, so the Ni powder is 14.13mg, and the powder particle size is 500nm; the Ni powder is dried in a vacuum oven for 10h; the ZrB is connected by the spark plasma sintering method. 2-SiC ceramics, heated up to 1200°C at 50°C / min in ...

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Abstract

The invention belongs to the technical field of connection of inorganic composite materials, and relates to a connection method of ZrB2-based ceramic. A spark plasma sintering method is adopted to connect ZrB2-SiC ceramics, and Ni powder is used as brazing filler between the ceramics. In the spark plasma sintering connection process, Ni diffuses in a ceramic body and reacts with ceramic matrix components, and the characteristic of local heating of a spark plasma sintering method is combined; the problems of long connection time and non-uniform element distribution of a connector joint area aresolved, the connection time is remarkably shortened, the element distribution of the obtained ZrB2-SiC/Ni/ZrB2-SiC ceramic joint is uniform, and the mechanical property of the joint is good. In the technological process, the environment temperature borne by the ceramic matrix is relatively low, and growth of crystal grains of the ceramic matrix is slowed down; the spark plasma sintering connection method has the characteristic of plasma electric field diffusion, element diffusion is effectively promoted, and Ni and ceramic matrix components are uniformly distributed. Through the method, the structural integrity of the joint is improved, and the mechanical property of the structure is improved.

Description

technical field [0001] The invention belongs to the technical field of connection of inorganic composite materials, in particular to a ZrB 2 The joining method of base ceramics. Background technique [0002] Ultra-high temperature ceramics (UHTC) can maintain stable physical and chemical properties in extreme environments, and are considered to be one of the best candidate materials for thermal protection systems of hypersonic aircraft. UHTC is mainly used in the nose cone and leading edge of hypersonic vehicles and the key high-temperature components of scramjet combustion chambers. Thermal protection components are large in size and complex in shape. However, UHTC cannot overcome the shortcomings of ceramic materials such as inherent brittleness and poor formability, and it is difficult to complete the manufacture of complex components or large-scale components through direct sintering or processing. These shortcomings severely limit the application of UHTC in cutting-e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B37/00
CPCC04B37/00
Inventor 晋小超李盼范学领闫小杰吉新阔
Owner XI AN JIAOTONG UNIV
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