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Cleaning solution for removing surface residues after CMP of multi-layer copper interconnection barrier layer

A technology of barrier layer and cleaning liquid, applied in the field of microelectronics, can solve the problems affecting the yield, performance and reliability of devices, adverse effects on equipment performance, etc., and achieve the effects of good stability, simple preparation method and simple composition

Inactive Publication Date: 2021-01-05
HEBEI UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Failure to effectively remove these residues after post-cleaning can adversely affect device performance and directly impact device yield, performance, and reliability

Method used

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  • Cleaning solution for removing surface residues after CMP of multi-layer copper interconnection barrier layer
  • Cleaning solution for removing surface residues after CMP of multi-layer copper interconnection barrier layer
  • Cleaning solution for removing surface residues after CMP of multi-layer copper interconnection barrier layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Take 1% of FA / O chelating agent, 2% of dodecyl dimethyl amine oxide (OA), 4% of FA / O surfactant, 6% of dodecylbenzenesulfonic acid (LABSA), silicone defoaming Agent (AFE-1410) 1%. The specific preparation method is as follows: add FA / O chelating agent, OA, FA / O surfactant, LABSA, and antifoaming agent to an appropriate amount of deionized water in sequence, stir evenly through step-by-step mixing, and finally fill up with deionized water to 1000g, continue to stir evenly, add a pH regulator (nitric acid or potassium hydroxide), and adjust the pH value to 7.5 to obtain the cleaning solution S3.

[0044] Residual defect test experiment: Clean the polished copper pattern sheet with cleaning solution S4, and then detect surface residues with a scanning electron microscope (SEM). The number of residual defects is shown in Table 1, and the map of residual defects is shown in Figure 11As shown, the SEM image is shown in Figure 12 shown.

Embodiment 2

[0046] Take 1% of FA / O chelating agent, 2% of dodecyl dimethyl amine oxide (OA), 4% of FA / O surfactant, 6% of dodecylbenzenesulfonic acid (LABSA), fatty alcohol polyoxygen Vinyl ether (JFC) 3%, silicone defoamer (AFE-1410) 1%. The specific preparation method is as follows: add FA / O chelating agent, OA, FA / O surfactant, LABSA, and antifoaming agent to an appropriate amount of deionized water in sequence, stir evenly through step-by-step mixing, and finally fill up with deionized water to 1000g, continue to stir evenly, add a pH regulator (nitric acid or potassium hydroxide), and adjust the pH value to 7.5 to obtain the cleaning solution S4.

[0047] Residual defect test experiment: Clean the polished copper pattern sheet with cleaning solution S4, and then detect surface residues with a scanning electron microscope (SEM). The number of residual defects is shown in Table 1, and the map of residual defects is shown in Figure 15 As shown, the SEM image is shown in Figure 16 s...

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Abstract

The invention discloses a cleaning solution for removing surface residues after CMP of a multi-layer copper interconnection barrier layer, and aims to provide a cleaning solution which is simple in component and can effectively remove the surface residues after CMP of the multi-layer copper interconnection barrier layer. The cleaning agent is composed of the following components in percentage by mass: 0.1-5% of chelating agent, 0.1-15% of surfactant, 1% of defoaming agent, a pH regulator and the balance of deionized water; the pH value of the cleaning solution is 7-7.5; and the surface activeagent is formed by compounding a cationic surface active agent, a nonionic surface active agent and an anionic surface active agent. According to the cleaning solution, the cationic surfactant, the non-ionic surfactant and the anionic surfactant are compounded, and large particles and surface residues on the surface of the multi-layer copper interconnection barrier layer after CMP can be effectively removed through the steric hindrance effect, so that the reliability, the electric energy property and other properties of a device are improved, and the yield of the device is increased.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a cleaning solution for removing residues on the surface of a multilayer copper interconnection barrier layer after CMP and a preparation method thereof. Background technique [0002] At present, the development trend of integrated circuit technology is: the wafer size increases, the number of active devices increases, the feature size decreases, and the requirements for the surface cleanliness of the copper interconnection barrier layer are relatively strict. The importance of cleaning in the semiconductor industry has aroused people's attention. highly valued. As the main planarization technology, CMP realizes the planarization of the material surface through chemical reaction and mechanical friction. It is applied to VLSI and has local and global planarization effects. However, various defects are formed on the surface of the workpiece during the CMP process. Includ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/86C11D3/30C11D3/33C11D3/04C11D3/16C11D3/60C11D11/00C23G1/24
CPCC11D1/86C11D3/30C11D3/33C11D3/042C11D3/044C11D3/162C23G1/24C11D1/72C11D1/008C11D1/22C11D1/146C11D1/75C11D1/29C11D1/66C11D1/58C11D2111/22
Inventor 王辰伟刘玉岭罗翀高宝红何彦刚张保国
Owner HEBEI UNIV OF TECH
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