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Self-assembled gap-adjustable gold nano-film preparation method

A gold nano and self-assembly technology, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve the problems of poor uniformity of nano-gold discs, difficult control of components, and impurity pollution, etc., to achieve Excellent optical and catalytic properties and biocompatibility, good market prospects, strong binding effect

Active Publication Date: 2021-01-05
SHANDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the uniformity of the nano-gold disk prepared by the prior art is not good, and there are problems such as difficult control of the composition, many defects, and contamination by impurities.

Method used

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  • Self-assembled gap-adjustable gold nano-film preparation method
  • Self-assembled gap-adjustable gold nano-film preparation method
  • Self-assembled gap-adjustable gold nano-film preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Example 1: Preparation process of self-assembled gold nanodisks with adjustable gap

[0029] a) Base cleaning

[0030] Choose a transparent siliceous quartz plate as the substrate and clean it. First put the base quartz plate into detergent / deionized water mixture, isopropanol, and acetone for ultrasonic cleaning for 5 minutes. Rinse with plasma water and dry with inert gas to ensure that the surface of the base quartz plate is clean and free of impurities. The power of ultrasonic cleaning is 150W, and the ultrasonic frequency is 40KHz.

[0031] b) Substrate pretreatment

[0032] Put the cleaned and dried base quartz plate into the plasma cleaning machine, with the side to be surface treated facing up, vacuumize for 2 minutes, the pressure in the chamber reaches 10Pa, the working power is 50W, and the cleaning frequency is 50Hz. The residual oxygen molecules are ionized into oxygen ions , the plasma surface was treated for 1 min, and the treated substrate was taken ou...

Embodiment 2

[0044] In this embodiment, the sputtering time of step c) is 20s, 30s, 40s, 50s, 60s, and other implementation conditions are the same as in Example 1, and the thicknesses of the corresponding self-assembled gold nanodiscs are 8.1nm, 11.8nm, and 17.0nm respectively. , 24.6nm, 35nm, the particle gap is 26-36nm, 19-25nm, 13-18nm, 8-12nm, 3-7nm, the thickness of the self-assembled nano gold disk and the particle gap are related to the sputtering time, the longer the sputtering time , the larger the thickness of the nano-gold film, the smaller the gap between the particles.

Embodiment 3

[0046] In this embodiment, step c) the distance between the gold target and the substrate quartz plate is 3cm, 4cm, 5cm, 6cm, 7cm, other implementation conditions are the same as in Example 1, and the thicknesses of the corresponding self-assembled nano-gold disks are 7.5nm, 6.8nm, respectively. nm, 5.6nm, 4.3nm, 2.7nm, particle gap respectively 28-30nm, 31-33nm, 34-37nm, 38-42nm, 42-47nm, self-assembled nano-gold disk thickness and particle gap with gold target and substrate quartz sheet There is a relationship between the distance between the gold target and the base quartz plate, the larger the distance between the gold target and the substrate quartz plate, the smaller the thickness of the nano-gold film, and the larger the gap between the particles.

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Abstract

The invention discloses a self-assembled gap-adjustable gold nano-film preparation method. The self-assembled gap-adjustable gold nano-film preparation method comprises the following steps that a substrate is cleaned, and surface treatment modification is carried out by using plasma to enable the substrate to show high adhesive force; and then metal Au is taken as a sputtering target material, low-vacuum sputtering equipment is adopted, the vacuum degree is controlled to be smaller than or equal to 10 Pa, oxygen is used as working gas, the distance between the target material and the substrateis adjusted to range from 3 cm to 7 cm, the discharge current is adjusted to range from 5 mA to 10 mA, and preparation of a gold nano-film is completed after a period of sputtering time. The method is simple in process, easy in process control, low in cost, high in deposition rate, high in binding force and capable of realizing large-scale commercial production. By adjusting the environment pressure and the sputtering current and setting the sputtering distance and time, nanoparticles are self-assembled on the surface of the substrate to form the ordered two-dimensional nano-film, and the gaps between the nanoparticles are adjustable. A prepared nano-gold disc is smooth in surface and uniform in thickness, has excellent optical, electric and heat conduction characteristics and biocompatibility, and is high in stability and good in repeatability.

Description

technical field [0001] The invention relates to the technical field of self-assembly of nano-gold, in particular to a preparation method of a self-assembled gold nano-film. Background technique [0002] Self-assembly is a spontaneous process from simple to complex, from disorder to order. Specifically, the whole process is that several individuals are spontaneously related at the same time and come together to form a tight and orderly whole, which is a complex synergy of the whole. In the process of preparing nano-films, the low-vacuum sputtering method is used, the sputtering current is changed by adjusting the deposition environment pressure, and the sputtering time is set, so that the nanoparticles will self-assemble on the surface of the substrate material to form ordered binary structures. Dimensional nano film. Self-assembly technology is simple and easy to operate, does not require special equipment, has good preparation reproducibility, and is basically not affecte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/02C23C14/54C23C14/18C23C14/04B82Y30/00B82Y40/00
CPCC23C14/34C23C14/022C23C14/54C23C14/185C23C14/04B82Y30/00B82Y40/00
Inventor 邢飞李宗文韩雪吴田鸽姬广民田敬坤
Owner SHANDONG UNIV OF TECH
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