Switching semiconductor device parallel circuit and control method thereof

Abstract

The invention discloses a power switch semiconductor device parallel circuit, N commutation inductors are connected to the midpoints of N power switch semiconductor device half-bridges connected in parallel, and all the commutation inductors are connected to an output terminal and are connected with the midpoints of power diode half-bridges through damping resistors. The N power switch semiconductor device half-bridges are divided into two groups of main bridge arms and auxiliary bridge arms, and the auxiliary bridge arms are turned on before the main bridge arms are turned on, so that all power switch tubes of the main bridge arms realize zero-voltage turn-on, the auxiliary bridge arm switch tubes realize zero-voltage or zero-current turn-on, and the turn-on loss of the power switch tubesis remarkably reduced. Resonance is carried out by utilizing a commutation inductor and a parasitic output capacitor of a diode, so that slow change of the voltage of an output terminal is realized,and dv/dt of the output voltage is remarkably reduced. The invention further discloses a working method of the circuit.

Description

technical field [0001] The invention belongs to the technical field of power electronics, and in particular relates to a parallel connection technology of switching semiconductor devices. Background technique [0002] In recent years, renewable energy and electric vehicles are gradually replacing traditional fossil energy and vehicles. The realization of this energy change requires high-efficiency and high-power-density power electronic converters. As the main components of power electronic converters, the market share of power switching semiconductor devices is constantly increasing. In particular, as the wide bandgap power switching semiconductor device technology continues to mature, its switching characteristics and reliability continue to improve. However, due to yield, thermal management, and cost constraints, the current ratings of wide-bandgap semiconductor die and discrete devices are still relatively low, as published in IEEE Transactions on Power Electronics Vol....

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Problems solved by technology

[0005] Although the above methods can improve the current sharing characteristics of the parallel switching tubes, in hard switching applications, the switching loss of the parallel switching tubes is still large

Moreover, due to the fast switching speed, the voltage change rate (dv / dt noise) of the wide bandgap semiconductor switch tube is significantly higher than that of the silicon semiconductor switch tube, which poses a greater challenge to the electromagnetic compatibility of the power electronic system

However, the existing wide bandgap semiconductor switch tube parallel connection scheme cannot significantly reduce the voltage change rate (dv / dt) of the switch tube

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