Semiconductor device and preparation method thereof

Abstract

The invention relates to a semiconductor device and a preparation method thereof. An active layer in the semiconductor device comprises a first quantum well layer and a second quantum well layer whichare arranged in the stacking direction, the wavelength difference between the first quantum well layer and the second quantum well layer ranges from 10 nm to 20 nm, and by setting the wavelength difference between the first quantum well layer and the second quantum well layer, the active layer is enabled to have two types of quantum wells at the same time, and the formed overall material gain isformed by superposing two groups of material gains at different wavelength positions, thereby achieving the simultaneous manufacturing of two MWDM-standard channel semiconductor devices or four LWDM-standard channel semiconductor devices through a single semiconductor device. Different from the technology that only one channel semiconductor device is manufactured on a common semiconductor device,the semiconductor device is beneficial to improving the production efficiency and the yield, and meanwhile, due to the advantage of ensuring the design of the epitaxial structure, the product performance is prevented from being influenced by errors in process manufacturing.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] With the development of data information, the requirements for signal transmission tend to be higher speed and higher quality. In response to the improvement of communication demand, the Ministry of Industry and Information Technology of China has issued 5G licenses to relevant mobile telecom operators in June 2019. This move means that the commercialization of the fifth generation mobile communication technology solution (5th Generation Wireless System, referred to as 5G) is underway. In order to quickly deploy the 5G communication system, the design scheme of the 5G wireless communication base station in the fronthaul part is a part of the entire communication system that has attracted much attention. Multiplexing) and the newly proposed 12-wavelength MWDM (MetroWavelength...

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Problems solved by technology

[0004] The 5G communication system focuses on the improvement of communication quality and the effective control of costs. However, since the cooling device is introduced into the 25Gbps semiconductor device, it will inevitably increase the energy consumption of the entire optical module. If you want to control the temperature of the cooling device at room temperature or even lower , although it can guarantee the excellent performance of the chip, it also wastes more power consumption on the cooling device, which makes the MWDM and LWDM schemes with high equipment cost and increase the energy cost at the same time, in order to improve this problem , the temperature control of the cooling device will be set at around 50°C, which is evaluated as the temperature at which the power consumption of the cooling device can be effectively reduced and the performance of the semiconductor device can still operate normally

[0005] General 25Gbps semiconductor devices are sensitive to temperature changes, especially bandwidth (Bandwidth) deteriorates significantly with temperature. If you want to realize 25Gbps semiconductor devices at 50°C from the perspective of commercialization, the problem to be overcome lies in the quality of the wafer. After all, under the temperature control of the external environment of 50°C, the junction temperature (Junction Temperature) of the active layer inside the semiconductor device is at least above 60°C~70°C. The commercial yield rate also has a great impact. The commercial yield rate is also related to the manufacturing cost of the chip. It can overcome the yield fluctuation caused by the process from the design to achieve a high commercial yield rate. This is for the cooling type 25Gbps semiconductor device is very important

[0006] For 12-wave MWDM, the channel spacing is larger than that of LWDM. Generally, in order to ensure the wafer yield, one channel must be designed to match the epitaxial structure of a wafer. 12 channels means that there must be 12 types of wafer epitaxial structure design. The production capacity and time control of equipment is very unfavorable, and although the LWDM channel spacing is small, the completion of 12-channel LWDM chips must also correspond to at least 5 types of wafer epitaxial structure design, which has an impact on production efficiency and cost

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