Transient suppression diode and method of manufacturing the same

Abstract

A transient suppression diode and its manufacturing method, the method includes providing a substrate, and defining a chip area; forming a patterned barrier layer on the surface of the substrate in the chip area, and the patterned barrier layer is an axisymmetric closed ring , using the patterned barrier layer as a mask to diffuse the substrate to form a PN junction. Since the place where the patterned barrier layer is located can block the diffusion, the diffusion through the diffusion window formed by the patterned barrier layer makes the two adjacent diffusion areas communicate only at the bottom of the patterned barrier layer area. The interface of the PN junction is a continuous curved surface, that is, the PN junction is a non-planar junction with multiple radians, which increases the actual effective junction area of ​​the PN junction. Therefore, in a chip with the same area, the effective contact area of ​​the PN junction is smaller. The larger the current, the greater the current that can pass, which makes the electrical performance of the semiconductor device better, and at the same time reduces the cost.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a transient suppression diode and a manufacturing method thereof. Background technique [0002] Transient interference of voltage and current is the main cause of damage to electronic circuits and equipment, and often brings incalculable losses to people. These disturbances usually come from the start-stop operation of power equipment, the instability of the AC grid, lightning strike interference and electrostatic discharge, etc. Transient disturbances are almost everywhere and all the time, making people feel hard to guard against. Therefore, a high-efficiency circuit protection device TVS is proposed to effectively suppress transient interference. TVS (Transient Voltage Suppressor) or transient suppression diode, TVS is a PN junction semiconductor diode device formed by silicon diffusion process. When the two poles of TVS are subjected to reverse transient ...

AI Technical Summary

Problems solved by technology

[0003] In the application process, it is often necessary to use a higher-power TVS. However, in the current manufacturing process of PN junction semiconductor diode devices, making a higher-power TVS means that a larger-sized semiconductor chip is required, so that the transient voltage Suppresses the volume increase of the diode device, which increases the manufacturing cost

Images