Silicon-Silicon Nitride Integrated Polarizing Beam Splitter Based on Vertical Coupling Structure

A polarization beam splitter and vertical coupling technology, applied in the direction of instruments, light guides, optics, etc., can solve the problems of small manufacturing capacity of directional couplers, unfavorable large-scale photon integration, large horizontal size of devices, etc., to reduce the coupling length, Effect of compact structure and short longitudinal length

CN112269224BActive Publication Date: 2022-04-26NANJING UNIV OF POSTS & TELECOMM
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2022-04-26

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Abstract

The invention discloses a silicon-silicon nitride integrated polarization beam splitter based on a vertical coupling structure, including an input waveguide, a polarization beam splitting waveguide, a first output waveguide and a second output waveguide, and the input waveguide is connected to one end of the polarization beam splitting waveguide , the other end of the polarization beam-splitting waveguide is respectively connected to the first output waveguide and the second output waveguide, and the polarization beam-splitting waveguide is a three-layer structure composed of silicon-silicon nitride-silicon from bottom to top. The invention has a compact structure, has shorter lateral dimensions and longitudinal lengths, improves the integration of the device; has a higher polarization extinction ratio; has larger manufacturing tolerances, and has relatively low requirements on the precision of the photolithography process, greatly The process cost is reduced.
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Description

technical field

[0001] The invention relates to a polarization beam splitter, in particular to a silicon-silicon nitride integrated polarization beam splitter based on a vertical coupling structure. Background technique

[0002] As people's demand for information exchange increases day by day, the optical communication system needs larger and larger transmission capacity and faster and faster processing speed, and the requirement for the integration degree of circuit and optical path is also higher and higher. The gradual application of 5G technology and high-speed optical interconnection in data centers make large-scale photonic integration the direction of future development. In recent years, photonic integrated circuits based on silicon-on-insulator (SOI) platforms have begun to gain widespread attention and applications, mainly due to the ultra-high refractive index difference between silicon dioxide and silicon, which can well confine the optical field. At the core lay...

Examples

Embodiment Construction

[0022] Such as figure 1 , the silicon-silicon nitride integrated polarization beam splitter based on the vertical coupling structure described in this embodiment includes an input waveguide 1, a polarization beam splitting waveguide 2, a first output waveguide 3 and a second output waveguide 4, and is coated on In the outermost cladding layer 5 of the polarization beam splitter, the input waveguide 1 is connected to one end of the polarization beam splitting waveguide 2, and the other end of the polarization beam splitting waveguide 2 is respectively connected to the first output waveguide 3 and the second output waveguide 4, and the polarization beam splitting waveguide 2 It is a three-layer structure composed of silicon-silicon nitride-silicon distributed sequentially from bottom to top. The polarizing beam splitter in this embodiment is fabricated on a silicon dioxide substrate 6 .

[0023] The input waveguide 1 and the first output waveguide 3 are two-layer structures com...