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Method for regulating and controlling number of molybdenum disulfide layers in graphene/molybdenum disulfide heterojunction

A technology of molybdenum disulfide and graphene, which is applied in the direction of coating, gaseous chemical plating, metal material coating process, etc., to achieve high flow rate, convenient operation, excellent uniformity and consistency

Inactive Publication Date: 2021-01-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are few research reports on the direct preparation of molybdenum disulfide on graphene, mainly focusing on graphene / single-layer molybdenum disulfide and graphene / double-layer molybdenum disulfide. Construction of mass junctions remains a challenge

Method used

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  • Method for regulating and controlling number of molybdenum disulfide layers in graphene/molybdenum disulfide heterojunction
  • Method for regulating and controlling number of molybdenum disulfide layers in graphene/molybdenum disulfide heterojunction
  • Method for regulating and controlling number of molybdenum disulfide layers in graphene/molybdenum disulfide heterojunction

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Embodiment 1

[0056] A method for regulating the number of molybdenum disulfide layers in a graphene / molybdenum disulfide heterojunction provided by a preferred embodiment of the present invention, the specific steps are as follows:

[0057] Pair size 1 x 1cm 2 The silicon dioxide / silicon substrate was ultrasonically treated with acetone, absolute ethanol and deionized water in sequence, and then the surface of the silicon dioxide / silicon substrate was treated hydrophilically with Plasma.

[0058] The copper foil with graphene is cut into required shape, is fixed on PET with adhesive tape edge sealing, then spin-coats on graphene / Front side of copper foil; use 1000rpm to spread the glue for 10s, 3000rpm to shake the glue for 30s, place on a hot plate at 120°C to harden the film for 10min, cut off the tape on the four sides of the copper foil, and remove the PET at the bottom; put 1mol / L ferric chloride aqueous solution on the surface for ~5min , pick up the copper foil with tweezers and t...

Embodiment 2

[0065] A method for regulating the number of molybdenum disulfide layers in a graphene / molybdenum disulfide heterojunction provided by a preferred embodiment of the present invention, the specific steps are as follows:

[0066] Pair size 1 x 1cm 2 The silicon dioxide / silicon substrate was ultrasonically treated with acetone, absolute ethanol and deionized water in sequence, and then the surface of the silicon dioxide / silicon substrate was treated hydrophilically with Plasma.

[0067] The copper foil with graphene is cut into required shape, is fixed on PET with adhesive tape edge sealing, then spin-coats on graphene / Front side of copper foil; use 1000rpm to spread the glue for 10s, 3000rpm to shake the glue for 30s, place on a hot plate at 120°C to harden the film for 10min, cut off the tape on the four sides of the copper foil, and remove the PET at the bottom; put 1mol / L ferric chloride aqueous solution on the surface for ~5min , pick up the copper foil with tweezers and t...

Embodiment 3

[0074] A method for regulating the number of molybdenum disulfide layers in a graphene / molybdenum disulfide heterojunction provided by a preferred embodiment of the present invention, the specific steps are as follows:

[0075] Pair size 1x1 cm 2 The silicon dioxide / silicon substrate was ultrasonically treated with acetone, absolute ethanol and deionized water in sequence, and then the surface of the silicon dioxide / silicon substrate was treated hydrophilically with Plasma.

[0076] The copper foil with graphene is cut into required shape, is fixed on PET with adhesive tape edge sealing, then spin-coats on graphene / Front side of copper foil; use 1000rpm to spread the glue for 10s, 3000rpm to shake the glue for 30s, put it on a hot plate at 120°C to harden the film for 10min, cut off the tape on the four sides of the copper foil, and remove the PET at the bottom; put 1mol / L ferric chloride aqueous solution on the surface for ~5min , pick up the copper foil with tweezers and r...

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Abstract

The invention discloses a method for regulating and controlling number of molybdenum disulfide layers in a graphene / molybdenum disulfide heterojunction and belongs to the technical field of preparation of semiconductor materials. By taking single element sulfur as a sulfur source and molybdenum pentachloride as a molybdenum source, wherein one sulfur source and one molybdenum source are available,a preparation mode of a double-temperature area is adopted to prepare the molybdenum disulfide / graphene heterojunction on a silicon dioxide / silicon substrate with graphene. By controlling the qualityof molybdenum pentachloride, the number of molybdenum disulfide layers in the graphene / molybdenum disulfide heterojunction is regulated and controlled effectively.

Description

[0001] 1. Technical field [0002] The invention belongs to the technical field of semiconductor material preparation, and in particular relates to a method for regulating the number of molybdenum disulfide layers in a graphene / molybdenum disulfide heterojunction. [0003] 2. Background technology [0004] With the current development trend of self-device miniaturization, compared with traditional bulk materials, 2D layered materials (graphene, transition metal chalcogenides, etc.) have attracted extensive research interest. Among the many two-dimensional material structures, graphene / molybdenum disulfide has become one of the research hotspots due to its unique structure. On the one hand, graphene, as a zero-bandgap semiconductor material, has a very high mobility (theoretical value is as high as 200,000cm 2 / V s); on the one hand, the bandgap of single-layer molybdenum disulfide is 1.8eV (optical bandgap), and its bandgap decreases with the increase of layers (from direct ba...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/26C23C16/44C23C16/52C23C16/02H01L21/02
CPCC23C16/02C23C16/26C23C16/305C23C16/44C23C16/52H01L21/02381H01L21/02568H01L21/0262
Inventor 徐克赛周宇李萍剑
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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