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Gas mixing top tray assembly of MOCVD equipment and reaction device

A top-plate and gas-mixing technology, which is applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of lowering process gas temperature, insufficient process gas mixing, and insufficient cooling, etc., to increase the thickness of the film Quality and uniformity, improved heat exchange efficiency, effect of high cooling water content

Pending Publication Date: 2021-01-29
山西中科潞安紫外光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing technology, the layout of the MOCVD top plate inlet pipeline cannot fully mix the process gas, and the design of the water cooling plate in the top plate assembly cannot minimize the temperature of the process gas to reduce the pre-reaction between the process gases
Insufficient mixing of process gas and insufficient cooling affect the quality and uniformity of epitaxial wafer growth

Method used

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  • Gas mixing top tray assembly of MOCVD equipment and reaction device
  • Gas mixing top tray assembly of MOCVD equipment and reaction device
  • Gas mixing top tray assembly of MOCVD equipment and reaction device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] see Figure 1-5 , a MOCVD equipment gas mixing top plate assembly, comprising: a top plate 1, a gas uniform net 2 and a gas uniform water cooling plate 3; the gas uniform net 2 is arranged between the top plate 1 and the gas uniform water cooling plate 3; A mixing cavity 17 is formed between the top plate 1 and the air uniform net 2, see image 3 As shown, the top of the top plate 1 is provided with a first air intake pipeline 4 and a second air intake pipeline 5 communicating with the mixing cavity 17; Cavity, the lower surface of the gas uniform net 2 is in direct contact with the upper surface of the gas uniform water cooling plate 3; the upper surface of the gas uniform water cooling plate is covered with a plurality of water channels arranged in parallel, and the water channels are connected end to end to form a water cooling tank. And the waterway gap is full of uniform pores, such as Figure 5 shown.

[0044] The length of each water channel here is different....

Embodiment 2

[0061] Such as Figure 6 As shown: the present invention also relates to a MOCVD reaction device, including a top plate assembly, and a rotating wafer base 10 arranged under the shroud.

[0062] The height of the rotating wafer base 10 does not exceed the height of the last step of the air guide cover.

[0063] There is a certain distance between the base and the water-cooled gas distribution plate, which can ensure that the diffused gas has a long diffusion time and further cooling.

[0064] The bottom of the base 10 is connected with the driving mechanism through the rotating shaft 9 .

[0065] The working principle of this device is as follows:

[0066] refer to Figure 1-2 , the first gas MO source in the process gas enters the top plate of the MOCVD equipment system through the first gas pipeline 4 , and diffuses to the mixing cavity 17 through the first gas pipeline shower head in the top plate. The second gas N2 in the process gas diffuses to the mixing cavity 17 th...

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Abstract

The invention relates to a gas mixing top tray assembly of MOCVD equipment and a reaction device. The assembly comprises a top tray, a gas homogenizing net and a gas homogenizing water cooling tray; the gas uniformizing net is arranged between the top tray and the gas homogenizing water cooling tray; a mixing cavity is formed between the top tray and the gas homogenizing net; a first gas inlet pipeline and a second gas inlet pipeline which are communicated with the mixing cavity are arranged at the top of the top tray; the lower surface of the gas homogenizing net is in direct contact with theupper surface of the gas homogenizing water cooling tray; a plurality of water channels which are arranged in parallel are distributed on the upper surface of the gas homogenizing water cooling tray;the water channels are connected end to end to form a water-cooling groove; and air homogenizing holes are distributed on the periphery of the water-cooling groove and gaps among the water channels.According to the gas mixing top tray assembly of the MOCVD equipment and the reaction device, large-arc design is carried out on the water-cooling groove in the gas homogenizing water cooling tray, sothat process gas passing through the water cooling tray can be cooled, the pre-reaction between the process gases is reduced, and the quality and uniformity of a film in the growth of an epitaxial wafer of the MOCVD equipment are improved.

Description

technical field [0001] The invention relates to the technical field of gas phase deposition, in particular to an MOCVD equipment mixed gas top plate assembly and a reaction device. Background technique [0002] Metal-organic chemical vapor deposition (MOCVD) is a new type of vapor phase epitaxial growth technology. MOCVD uses organic compounds of group III and group II elements and hydrides of group V and group VI elements as crystal growth source materials. The gas phase epitaxy method is carried out on the substrate to grow thin-layer single crystal materials of various III-V, II-VI compound semiconductors and their multiple solid solutions. [0003] MOVCD technology is an advanced technology for growing semiconductor light-emitting materials for light-emitting diodes (LEDs). It is currently widely used in growing semiconductor light-emitting materials for light-emitting diodes (LEDs). It can be manufactured with MOCVD equipment, and MOCVD technology has an absolute compe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/458C23C16/18
CPCC23C16/18C23C16/45512C23C16/4584
Inventor 朱金华宋涛李辉周国军
Owner 山西中科潞安紫外光电科技有限公司
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