Method for preparing zinc oxide film based on silicon-based covariant substrate

A zinc oxide film and substrate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as limitation, improvement of crystalline quality and surface morphology, affecting the application of Si-based ZnO thin film materials, etc. The effect of quality improvement, superior optoelectronic performance, easy realization and promotion

Pending Publication Date: 2022-06-24
GUANGDONG INTELLIGENT ROBOTICS INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the large lattice mismatch between Si and ZnO, large stresses are often accumulated in the prepared thin film layer, and it has been difficult to improve the crystal quality and surface morphology to a greater extent, which greatly limits And affect the application of Si-based ZnO thin film materials

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A method for preparing a zinc oxide thin film based on a silicon-based covariant substrate, comprising the following steps:

[0026] Step 1: Select the SOI material with an ultra-thin silicon single crystal layer on the top as the silicon-based covariant substrate and put it into the MOCVD equipment, where the SOI material is an ultra-thin Si with a thickness of 50 nm on the top prepared by high-energy oxygen ion implantation A single crystal layer, a silicon oxide insulating layer with a thickness of 350 nm in the middle and a triple-layered SOI material with a (100) oriented silicon single crystal substrate at the bottom;

[0027] Step 2: Evacuate the reaction chamber in the MOCVD equipment to below 10 Torr, then fill the reaction chamber with nitrogen to increase the pressure, and then pump it to below 10 Torr, and repeat this twice to purify the air in the reaction chamber;

[0028] Step 3: Use the carrier gas to feed the zinc source in the MOCVD equipment, and grow...

Embodiment 2

[0032] A method for preparing a zinc oxide thin film based on a silicon-based covariant substrate, comprising the following steps:

[0033] Step 1: Select the SOI material with an ultra-thin silicon single crystal layer on the top as the silicon-based covariant substrate and put it into the MOCVD equipment, where the SOI material is an ultra-thin Si with a thickness of 30 nm on the top prepared by high-energy oxygen ion implantation A single crystal layer, a silicon oxide insulating layer with a thickness of 450 nm in the middle and a triple-layered SOI material with a (100) oriented silicon single crystal substrate at the bottom;

[0034] Step 2: Evacuate the reaction chamber in the MOCVD equipment to below 10 Torr, then fill the reaction chamber with nitrogen to increase the pressure, and then pump it to below 10 Torr, and repeat this twice to purify the air in the reaction chamber;

[0035] Step 3: Use the carrier gas to feed the zinc source in the MOCVD equipment, and grow...

Embodiment 3

[0039] A method for preparing a zinc oxide thin film based on a silicon-based covariant substrate, comprising the following steps:

[0040] Step 1: Select the SOI material with an ultra-thin silicon single crystal layer on the top as the silicon-based covariant substrate and put it into the MOCVD equipment, where the SOI material is an ultra-thin Si with a thickness of 40 nm on the top prepared by high-energy oxygen ion implantation A single crystal layer, a silicon oxide insulating layer with a thickness of 400 nm in the middle and a triple-layered SOI material with a (100) oriented silicon single crystal substrate at the bottom;

[0041] Step 2: Evacuate the reaction chamber in the MOCVD equipment to below 10 Torr, then fill the reaction chamber with nitrogen to increase the pressure, and then pump it to below 10 Torr, and repeat this twice to purify the air in the reaction chamber;

[0042]Step 3: Use the carrier gas to feed the zinc source in the MOCVD equipment, and grow ...

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Abstract

The invention relates to a method for preparing a zinc oxide film based on a silicon-based covariant substrate, which comprises the following steps of: selecting an SOI (Silicon On Insulator) material with an ultrathin silicon single crystal layer at the top as the silicon-based covariant substrate, and putting the silicon-based covariant substrate into MOCVD (Metal Organic Chemical Vapor Deposition) equipment; emptying air in a reaction chamber in the MOCVD equipment; introducing a zinc source in MOCVD (Metal Organic Chemical Vapor Deposition) equipment by utilizing carrier gas, and growing a zinc isolation layer on the substrate; introducing a zinc source and an oxygen source in the MOCVD equipment by using carrier gas so as to grow a zinc oxide film on the zinc isolation layer; and after the pressure intensity of the reaction chamber is increased to normal pressure and the temperature is reduced to normal temperature, closing the carrier gas, and taking out the zinc oxide film sample from the MOCVD equipment. According to the invention, the SOI material with the ultrathin silicon single crystal layer at the top is used as the covariant substrate, so that the mismatch strain of the ZnO epitaxial layer prepared and grown on the Si substrate can be coordinated, the residual stress accumulated in the film layer is reduced, and the growth quality of the film is improved. The method is low in raw material and equipment cost and simple in process, and the cleanliness and crystallization quality of the sample are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a zinc oxide thin film based on a silicon-based covariant substrate. Background technique [0002] As a representative of the third-generation wide-bandgap semiconductor material, zinc oxide (ZnO) can be used to fabricate optoelectronic devices such as flat panel display devices, light-emitting diodes, and lasers. In addition, ZnO has abundant sources, low price of raw materials, and relatively simple preparation method, which has very good commercial value. Although the research and application development of ZnO in the semiconductor field has received unprecedented attention at home and abroad in recent years, some key basic problems have not been fundamentally solved, such as the single-crystal epitaxial growth of high-quality ZnO thin films and the problem of P-type doping. As for the single crystal epitaxy of ZnO thin films, in addition to the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/365H01L27/12
CPCH01L21/02381H01L21/02491H01L21/02554H01L21/0262H01L27/1203
Inventor 倪明堂赵健州何立波吴俊美
Owner GUANGDONG INTELLIGENT ROBOTICS INST
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