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Solar cell

A solar cell and substrate technology, applied in the field of solar cells, can solve problems affecting the conversion efficiency of solar cells, etc., and achieve the effects of optimizing the resistance of the back electrode, small thickness of the back electrode, and small resistivity

Pending Publication Date: 2021-02-02
紫石能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The main purpose of the present invention is to provide a solar cell to solve the problem in the prior art that the diffusion barrier affects the conversion efficiency of the solar cell

Method used

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preparation example Construction

[0034]According to another aspect of the present invention, there is also provided a method for preparing the above-mentioned solar cell, comprising the following steps: forming an epitaxial layer 100 on a substrate 10; growing graphene on the epitaxial layer 100 and doping graphene quantum dots Graphene and graphene quantum dots are compounded to form a diffusion barrier layer 30; on the diffusion barrier layer 30, a back metal layer 40 is formed.

[0035] Specifically, the preparation process of the above-mentioned solar cell of the present invention may include the following processes:

[0036] 1) GaAs substrate 10 is placed in MOCVD equipment, under H 2 Under the protection of raising temperature to reaction temperature;

[0037] 2) Ga source and As source are introduced, GaAs is grown on GaAs substrate to obtain buffer layer 11, and the growth temperature is 800-1200°C;

[0038] 3) cut off the Ga source, feed the Al source, grow AlAs on the buffer layer 11 to obtain the...

Embodiment 1

[0051] This embodiment provides a method for preparing a solar cell, comprising the following steps:

[0052] On the GaAs substrate, a GaAs buffer layer with a thickness of 1000nm, an AlAs sacrificial layer with a thickness of 15nm, and an n-type GaAs ohmic contact layer with a thickness of 60nm (Si doped with a doping concentration of 5×10 17 cm -3 ), an AlInP top cell window layer with a thickness of 30nm, an n-type GaAs absorber layer with a thickness of 2400nm, a GaAs / AlGaAs PN junction with a thickness of 100nm, an AlGaAs bottom cell window layer with a thickness of 250nm, and a C-doped p Type AlGaAs ohmic contact layer (C-doped, doping concentration is 1×10 18 cm -3 ), an Ag light reflective layer with a thickness of 100 nm, a diffusion barrier layer 30 with a thickness of 10 nm, and a Cu back metal layer with a thickness of 3000 nm.

[0053] Wherein, the diffusion barrier layer is a graphene composite material layer, including graphene and graphene quantum dots doped...

Embodiment 2

[0056] The difference between the solar cell provided in this embodiment and Embodiment 1 is:

[0057] The thickness of the back metal layer is 2500nm.

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Abstract

The invention provides a solar cell. The solar cell comprises a substrate, an epitaxial layer, a diffusion impervious layer and a back metal layer which are stacked in sequence, the diffusion impervious layer is a graphene composite material layer, and the graphene composite material layer is formed by compounding graphene and graphene quantum dots. According tot the solar cell of the invention, the graphene-quantum dot composite material grows between the epitaxial layer and the back metal to serve as the diffusion impervious layer of the back metal, Cu diffusion is limited through combination of surface atoms of the graphene quantum dots and Cu atoms of the back metal, and the effect of the diffusion impervious layer is achieved; moreover, the resistivity of the graphene is very small, and therefore, the optimization of the resistance of a back electrode can be facilitated, and the conversion efficiency of the solar cell can be improved; furthermore, the graphene quantum dot layer orthe graphene-quantum dot composite structure is adopted to replace a common metal diffusion impervious layer, so that the thickness of the back electrode can be reduced, and the stress of the back electrode can be controlled.

Description

technical field [0001] The present invention relates to the field of photovoltaic technology, in particular to a solar cell. Background technique [0002] Since Cu has a lower resistivity than Al (the resistivity of Al is 2.62μΩ.㎝, the resistivity of Cu is 1.67μΩ.㎝) and high resistance to electromigration, it is widely used in the manufacture of solar devices as the back electrode material. However, the diffusion coefficient of Cu in semiconductor materials (such as Si, GaAs) is extremely high. In order to prevent Cu from diffusing into the solar cell, a back metal diffusion barrier layer is usually provided between the solar cell epitaxial layer and the back metal layer. [0003] At present, the materials used as the back metal Cu diffusion barrier are generally Ti, TiW, Ta, Mo, MoN, MoNi, W and other metals or metal alloys, and their resistivity is higher than that of Cu, which will increase the resistance of the back electrode. Large, so that the series resistance of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/02H01L31/0224H01L31/18
CPCH01L31/02H01L31/022425H01L31/18Y02E10/50Y02P70/50
Inventor 孙暮雪
Owner 紫石能源有限公司
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