Waveguide type germanium photoelectric detector based on photonic crystals and preparation method

Abstract

The invention provides a waveguide type germanium photoelectric detector based on photonic crystals and a preparation method. The germanium photoelectric detector comprises a silicon waveguide structure; and a germanium photoelectric detector which is connected to the silicon waveguide structure, wherein periodically arranged dielectric materials are arranged in a germanium absorption region of the germanium photoelectric detector and a peripheral silicon material region at the periphery of the germanium absorption region so as to form a photonic crystal structure with a slow light effect. Compared with a conventional waveguide type germanium photoelectric detector, the photoelectric detector can achieve higher light absorption efficiency, and achieves the preparation of a low-dark-current, low-capacitance and high-responsivity photoelectric detector through reducing the size of a device.

Description

technical field [0001] The invention belongs to the fields of semiconductor manufacturing and optical communication, and in particular relates to a photonic crystal-based waveguide germanium photodetector and a preparation method. Background technique [0002] Photodetectors are widely used in various fields of military and national economy. In the visible or near-infrared band, it is mainly used for optical communication, ray measurement and detection, industrial automatic control, photometry, etc.; in the infrared band, it is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing, etc. [0003] Germanium (Ge) photodetectors are widely used in the fields of optical communication, optical interconnection and optical sensing because of their easy integration with silicon (Si). However, there is a large lattice mismatch between germanium (Ge) material and silicon (Si) material, and it is extremely challenging to epitaxially grow high-quality germa...

AI Technical Summary

Problems solved by technology

Limited by the relatively low absorption coefficient of germanium (Ge) materials in the C and L communication bands, in order to achieve high responsivity, the detector must be long enough, which makes it difficult to further optimize the high-speed characteristics and dark current of the detector

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