MoS2 thin film containing 1T phase and preparation process of MoS2 thin film

A thin film preparation, mos2 technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems that can not meet the industrial production standards, poor bonding force of film substrate, difficult to achieve mass production, etc., to achieve Easy mass production, small temperature change, good binding effect

Inactive Publication Date: 2021-02-12
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Currently induced MoS 2 There are many ways to produce 1T phase transition, including intercalation stripping, mechanical ball milling, sulfur vacancies, stress, electron injection, etc., but most of the methods have problems such as complicated process, difficult process control, and easy pollution of products.
[0005] Ammonium ion-intercalated 1T-MoS was obtained by Liu et al. by hydrothermal method 2 , and proved that it is relatively stable in the air, but the bonding force of the film matrix is ​​poor, and it is far from reaching the standard of industrial production.
In addition, Milekin et al. used laser irradiation to periodically deposit on monolayer MoS 2 The Au nanostructure arrays on the 2H phase to 1T phase transition are also achieved, but only in single-layer MoS 2 small-scale applications, it is difficult to achieve mass production

Method used

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  • MoS2 thin film containing 1T phase and preparation process of MoS2 thin film
  • MoS2 thin film containing 1T phase and preparation process of MoS2 thin film
  • MoS2 thin film containing 1T phase and preparation process of MoS2 thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] The MoS containing 1T phase in this example 2 The preparation method of the film comprises the following steps.

[0030] (1) Use alcohol to ultrasonically clean the surface of the carbon fiber cloth, and dry it with a hair dryer;

[0031] (2) Using Ar as the working gas, using MoS with a purity >99.9% 2 Co-sputtering of target and Cu target to deposit MoS with 1T phase 2 film. The sputtering reaction parameters are: the working pressure is 0.2Pa, the sample revolution speed is 0.5r / min, the temperature is 30°C, the Ar flow rate is 20sccm, the MoS 2 Adopt radio frequency power supply, power is 300W, Cu target adopts DC power supply, power is 50W.

[0032] The preparation method of this example obtains MoS containing 1T phase 2 The preparation method of the film: the surface film deposited on the carbon fiber cloth substrate by magnetron sputtering, the surface film is made of Cu-doped MoS 2 composition:

Embodiment 2

[0034] The MoS containing 1T phase in this example 2 The preparation method of film is basically the same as Example 1, the difference is only in:

[0035] The substrate is nickel foam, MoS 2 A radio frequency power supply is used with a power of 50W, and the metal target is an Al target with a power of 5W.

[0036] The preparation method of this example obtains MoS containing 1T phase 2 The preparation method of the film: the surface film deposited on the foamed nickel substrate by magnetron sputtering, the surface film is made of Al-doped MoS 2 composition:

Embodiment 3

[0038] The MoS containing 1T phase in this example 2 The preparation method of film is basically the same as Example 1, the difference is only in:

[0039] The substrate is made of candle ash, the metal target is made of Ag, and the working pressure is 1Pa.

[0040] The preparation method of this example obtains MoS containing 1T phase 2 The preparation method of the film: the surface film deposited on the candle ash substrate by magnetron sputtering, the surface film is made of Ag-doped MoS 2 composition:

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Abstract

The invention discloses a MoS2 thin film containing a 1T phase and a preparation process of the MoS2 thin film. According to the preparation process, ethyl alcohol is used for cleaning the surface ofa substrate, an air blower is used for drying the substrate, the substrate is placed in a magnetron sputtering cavity, a metal-doped MoS2 layer is deposited on the substrate through co-sputtering of aMoS2 target and a metal target, and MoS2 phase change can be regulated and controlled through process control to obtain the MoS2 thin film containing the 1T phase. The thin film prepared by the preparation process has excellent electrical conductivity, catalytic activity and charge storage capacity, can be used in the fields of electrochemical energy conversion and storage, battery electrode materials, super-capacitors, gas sensors and the like and has wide market prospects, the preparation process is simple and easy to operate, and the deposition rate is high.

Description

technical field [0001] The present invention relates to the fields of electrochemical energy conversion and storage, battery electrode materials, supercapacitors, gas sensors, etc., and specifically relates to a MoS containing 1T phase 2 Thin film and its preparation process. Background technique [0002] The discovery of graphene in 2004 greatly promoted the research on layered materials. In recent years, MoS 2 There are more and more studies on graphene-like thin-layer structures. MoS with graphene-like structure 2 The few-layer or single-layer structure endows the material with a large specific surface area and abundant active sites, while 1T-MoS 2 Compared with the 2H phase, it has larger layer spacing, stronger conductivity and better catalytic activity, and has more excellent performance in catalytic materials, battery electrode materials, supercapacitors, electronic devices and sensors. [0003] However, 1T-MoS 2 The formation energy of the 2H phase is higher tha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35
CPCC23C14/0623C23C14/352
Inventor 宋忠孝陈亚奇杜运达高波杜晓晔李雁淮
Owner XI AN JIAOTONG UNIV
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