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Splicing growth process for large-size monocrystalline diamond

A single crystal diamond and diamond technology, which is applied in the field of large-size single crystal diamond splicing growth process, can solve the problems of high stress at the interface, high growth temperature, not a single crystal growth process, etc., and achieve the effect of good quality and good growth effect.

Pending Publication Date: 2021-02-23
物生生物科技(北京)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this growth process achieves single crystallization at the joint position, due to the high growth temperature, the stress at the joint at room temperature is huge, and it is not a single crystal growth process for the project.

Method used

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  • Splicing growth process for large-size monocrystalline diamond
  • Splicing growth process for large-size monocrystalline diamond
  • Splicing growth process for large-size monocrystalline diamond

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The diamond crystal seed is a square sheet with a side length of 5 mm and a thickness of 0.3 mm. The two adjacent edges are processed with trapezoidal tenon joints, one side of which is a protruding trapezoidal male head, and the adjacent side is a trapezoidal female with the same shape. mouth. The height of the trapezoidal male head is 200 microns, the length of the upper base is 200 microns, the length of the lower base is 240 microns, and the angle between the lower base and the waist is about 85°. The cleaning of the edge of the mortise joint adopts plasma cleaning, the specific process is a pressure of 80 torr, a power of 2500 watts, a hydrogen flow of 500 SCCM, an oxygen of 2 SCCM, and a cleaning time of 30 minutes. After splicing the diamond sheets, plasma is used for pretreatment. The treatment process is 80 Torr, power 3000 watts, hydrogen flow rate 500 SCCM, treatment temperature 805 degrees Celsius, and treatment for 30 minutes. The diamond sheets after the ...

Embodiment 2

[0036] The diamond crystal seed is a square sheet with a side length of 8 mm and a thickness of 0.3 mm, and trapezoidal tenon joints are processed on two adjacent edges. The height of the trapezoidal male head is 1 mm, the length of the upper base is 1.5 mm, the length of the lower base is 2.5 mm, and the angle between the lower base and the waist is about 65°. The cleaning of the edge of the mortise joint adopts plasma cleaning, the specific process is a pressure of 80 torr, a power of 2500 watts, a hydrogen flow of 500 SCCM, an oxygen of 2 SCCM, and a cleaning time of 30 minutes. After splicing the diamond seeds, plasma is used for pretreatment. The treatment process is 80 Torr pressure, 3000 watts power, 500 SCCM hydrogen flow rate, and 850 degrees Celsius treatment temperature for 30 minutes. The diamond sheets after the pretreatment are spliced ​​and grown by plasma. The growth process is 100 torr pressure, 5000 watts of power, 500 SCCM of hydrogen flow, 30 SCCM of methan...

Embodiment 3

[0039]The diamond crystal seed is a square sheet with a side length of 10 mm and a thickness of 0.3 mm, and trapezoidal tenon joints are processed on two adjacent edges. The height of the trapezoidal male head is 0.5 mm, the length of the upper base is 0.5 mm, the length of the lower base is 1.5 mm, and the angle between the lower base and the waist is 45°. The cleaning of the edge of the mortise joint adopts plasma cleaning, the specific process is a pressure of 80 torr, a power of 2500 watts, a hydrogen flow of 500 SCCM, an oxygen of 2 SCCM, and a cleaning time of 30 minutes. After splicing the diamond sheets, plasma is used for pretreatment. The treatment process is 80 Torr pressure, 3000 watts power, 500 SCCM hydrogen flow, and 850 degrees Celsius treatment temperature for 30 minutes. The diamond sheets after the pretreatment are spliced ​​and then grown by plasma. The growth process is a pressure of 8 torr, a power of 6000 watts, a hydrogen flow rate of 500 SCCM, a methan...

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Abstract

The invention discloses a splicing growth process for large-size single crystal diamond, and is suitable for epitaxial growth of single crystal diamonds by a microwave plasma chemical vapor deposition(MPCVD) method. The process comprises the following steps of: 1, processing the edges of seed crystal sheets of the single crystal diamonds to be in a tenon joint shape; 2, cleaning an edge interface. 3, carrying out double-sided polishing on the plurality of spliced seed crystals to reduce the height difference. 4, splicing the diamond seed crystals of which the edges are tenon-joint-shaped. 5,growing the spliced and polished crystal seeds of the polished diamond by adopting an MPCVD method. According to the process, through a micron-sized joggle joint gap technology, stress relaxation in the growth process of the monocrystal diamond is achieved, and the growth effect is improved. Splicing growth of the large-size single crystal diamond is achieved through joggling, edge treatment, height difference treatment and other processes, the large-size single crystal diamond obtained through the method has the advantages of being high in flatness, small in splicing part stress and the like,and the high-quality and large-size single crystal diamond can be obtained.

Description

technical field [0001] The invention relates to a splicing growth process for large-scale single crystal diamond, and relates to the fields of micro-nano processing and semiconductors. Background technique [0002] The preparation technology of single crystal diamond has gradually matured, but the preparation of large-size single crystal diamond sheets has been at the bottleneck. The growth effect of the existing splicing technology at the interface is poor, which is mainly reflected in the problems of high stress at the interface and prone to polycrystals. [0003] In Materials magazine 2020, 13, 91, the surface morphology of large-size single crystal diamond produced by the splicing method is disclosed. There will be height differences and polycrystalline edges at the splicing. [0004] In Journal of Crystal 463, pages 19-26, it is disclosed that in the process of preparing single crystal diamond sheets by the mosaic splicing method, the transition process from the polycry...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/06C30B29/04C30B25/20
CPCC30B33/06C30B29/04C30B25/205
Inventor 张涛闫石赵效铭
Owner 物生生物科技(北京)有限公司
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