Quantum dot light-emitting diode and its preparation method
A quantum dot light-emitting and diode technology, which is applied in the manufacture of semiconductor/solid-state devices, organic semiconductor devices, electric solid-state devices, etc. The effect of efficiency
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[0028] and, as figure 1 As shown, an embodiment of the present invention provides a method for preparing a quantum dot light-emitting diode, comprising the following steps:
[0029] S01. Provide substrate, In 2 S 3 Precursor solution and PVP solution;
[0030] S02. Deposit the In on the surface of the substrate 2 S 3 After the precursor solution, annealing is performed to prepare In 2 S 3 nanomaterial layer; in the In 2 S 3 The PVP solution is deposited on the surface of the nanomaterial layer, and annealing is performed to prepare a PVP layer to obtain In 2 S 3 An electron transport stack of nanomaterial layers and PVP layers; or
[0031] After depositing the PVP solution on the surface of the substrate, perform annealing treatment to prepare a PVP layer; deposit the In on the surface of the PVP layer 2 S 3 Precursor solution, annealed to prepare In 2 S 3 Nanomaterial layer to obtain In 2 S 3 Electron transport stack of nanomaterial layers and PVP layers.
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Embodiment 1
[0055] A preparation method of a quantum dot light-emitting diode, comprising the following steps:
[0056] Provide cathode substrate, indium chloride, ethanol, sodium sulfide, PVP;
[0057] Add an appropriate amount of indium chloride to 50ml of ethanol to form a solution with a total concentration of 0.5M; stir and dissolve at a temperature of 70°C; press S 2- with In 3+ The molar ratio of PVP is 3:2 by adding sodium sulfide dissolved in 10ml ethanol solution, and stirring at 70℃ for 4h to obtain a uniform solution; Dissolving an appropriate amount of PVP in ethanol to form a 1.5mg / ml PVP solution .
[0058] On the treated substrate, spin-coat the precursor solution and anneal at 250°C; drop the PVP solution onto the substrate, spin-coat and anneal at 100°C to form a film of In 2 S 3 / PVP stack structure;
[0059] in the In 2 S 3 A quantum dot light-emitting layer is deposited on the / PVP stack structure, a hole transport layer is deposited on the quantum dot light-em...
Embodiment 2
[0061] A preparation method of a quantum dot light-emitting diode, comprising the following steps:
[0062] Provide cathode substrate, indium nitrate, methanol, potassium sulfide, PVP;
[0063] Add an appropriate amount of indium nitrate to 50ml of methanol to form a solution with a total concentration of 0.5M; stir and dissolve at a temperature of 60°C; press S 2- with In 3+ Add potassium sulfide dissolved in 10ml of ethanol in a molar ratio of 3:2, and continue to stir for 4 hours at a temperature of 60 °C to obtain a uniform solution; Dissolve an appropriate amount of PVP in ethanol to form a 1.5mg / ml PVP solution .
[0064] On the treated substrate, spin-coat the precursor solution and anneal at 250°C; drop the PVP solution onto the substrate, spin-coat and anneal at 100°C to form a film of In 2 S 3 / PVP stack structure;
[0065] in the In 2 S 3 A quantum dot light-emitting layer is deposited on the / PVP stack structure, a hole transport layer is deposited on the qu...
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