Vertical cavity surface emitting laser based on van der Waals epitaxy and its fabrication method

A technology of vertical cavity surface emission and fabrication method, which is applied in the field of vertical cavity surface emitting laser and its fabrication, can solve the problems of complicated process and partial destruction of the active area, and achieves the advantages of simple process, reduced threshold current and improved crystal quality. Effect

Active Publication Date: 2022-02-18
TSINGHUA UNIV
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Problems solved by technology

The commonly used lift-off techniques include laser-induced lift-off (LLO), photoelectrochemical etching (PEC) of the sacrificial layer, wet / dry etching or chemical mechanical polishing (CMP), etc., not only the process is complex, but also the active area part wreaks havoc

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  • Vertical cavity surface emitting laser based on van der Waals epitaxy and its fabrication method
  • Vertical cavity surface emitting laser based on van der Waals epitaxy and its fabrication method
  • Vertical cavity surface emitting laser based on van der Waals epitaxy and its fabrication method

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Embodiment Construction

[0057] Embodiments of the present disclosure provide a van der Waals epitaxy-based vertical cavity surface-emitting laser and a fabrication method thereof, in which a GaN-based active region structure is epitaxially grown on a first substrate covered with a single-layer two-dimensional material, based on a single-layer The arrangement of two-dimensional materials can bond the GaN-based active region structure with the first distributed Bragg reflector structure on the second substrate after peeling off the first substrate, which greatly reduces the impact on the GaN-based active region. The structure is destroyed, thereby improving the crystal quality of the active region, reducing the threshold current, and obtaining a higher-quality GaN-based VCSEL. At the same time, the method of growing the active region structure by van der Waals epitaxy and then transferring it will not cause damage to the first substrate. Theoretically, the infinite reuse of the first substrate can be re...

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Abstract

A vertical cavity surface emitting laser based on van der Waals epitaxy and its manufacturing method. In the above manufacturing method, making a GaN-based active region structure includes: covering a single layer of two-dimensional material on a first substrate; The GaN-based active region structure is epitaxially grown on the first substrate of the dimensional material. The GaN-based active region structure includes from bottom to top: an n-type GaN layer, an active region, an electron blocking layer, a p-type GaN layer and a p+GaN layer, and the p+GaN layer serves as the first ohmic contact layer. A first DBR structure is formed on the second substrate. The GaN-based active region structure is peeled off from the first substrate. The stripped GaN-based active region structure is bonded to the first distributed Bragg reflector structure on the second substrate. A second DBR structure is formed over the first ohmic contact layer of the bonded structure. A vertical-cavity surface-emitting laser with low threshold current density and high gain is formed.

Description

technical field [0001] The disclosure belongs to the technical field of lasers, and relates to a van der Waals epitaxy-based vertical cavity surface emitting laser and a manufacturing method thereof. Background technique [0002] GaN-based light-emitting materials with wide bandgap can cover the wavelength range from deep ultraviolet to green, while vertical cavity surface emitting lasers (VCSEL) have low threshold current, can form two-dimensional arrays, single longitudinal mode, beam circular symmetry and high modulation rate And other advantages, it provides the possibility for full-color laser projection, laser display, white solid-state lighting, biosensor and high-speed optical communication. [0003] A vertical cavity surface emitting laser is a light-emitting device that confines photons in a direction perpendicular to the cavity through distributed Bragg reflectors (DBR) on both sides of the cavity. Multiple quantum well structures (MQWs) in the cavity confine the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/183H01S5/20H01S5/22H01S5/30H01S5/343H01S5/42
CPCH01S5/183H01S5/2004H01S5/2206H01S5/3013H01S5/343H01S5/423
Inventor 汪莱李振浩郝智彪罗毅
Owner TSINGHUA UNIV
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