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An atomic layer deposition technique for growing nb x c film method

An atomic layer deposition and thin film technology, applied in coatings, metal material coating processes, gaseous chemical plating, etc., can solve the problems of difficult controllability of particles and morphology, and achieve excellent compatibility, low resistivity, controllable precise effect

Active Publication Date: 2021-10-22
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Now synthesize Nb x The methods of C include vacuum carbothermal reduction method, magnetron sputtering method, DC arc method, etc.; however, these methods are very difficult to synthesize nano-Nb x C material has the problem of difficult controllable particles and morphology

Method used

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  • An atomic layer deposition technique for growing nb <sub>x</sub> c film method
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  • An atomic layer deposition technique for growing nb <sub>x</sub> c film method

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Embodiment 1

[0044] Niobium ethoxylate as Nb source, Nb with glucose as carbon source x C thin film atomic layer deposition method, including the following processes:

[0045] (1) With silicon as the substrate, the deposition temperature is 270°C, the Nb source is heated to 85°C to vaporize it, high-purity nitrogen is used as the carrier gas, and the gaseous Nb source is introduced, the carrier gas flow rate is 10 sccm, and the pulse time is 5s;

[0046] (2) Use high-purity nitrogen to purge after completing a pulse, and the purge time is 60s;

[0047] (3) Heating glucose to 55° C. to vaporize it, using high-purity nitrogen as the carrier gas, the carrier gas flow rate is 20 sccm, passing formic acid in pulse form, and the pulse time is 2 s;

[0048] (4) Use high-purity nitrogen to clean after completing a pulse, and the cleaning time is 34s;

[0049] The above (1)-(4) steps are repeated 400 times to obtain Nb with a certain thickness x C thin film, after measurement, the thickness of ...

Embodiment 2

[0051] Nb with niobium ethoxylate as Nb source and fructose as carbon source x C thin film atomic layer deposition method, comprising the following processes:

[0052] (1) With silicon nitride as the substrate, the deposition temperature is 290°C, the Nb source is heated to 100°C to vaporize it, and high-purity nitrogen is used as the carrier gas, and the gaseous Nb source is introduced, and the carrier gas flow rate is 30sccm, The pulse time is 7s;

[0053] (2) Use high-purity nitrogen to purge after completing a pulse, and the purge time is 54s;

[0054] (3) Heating the fructose to 65° C. to vaporize it, using high-purity nitrogen as the carrier gas, the carrier gas flow rate is 120 sccm, and ethanol is passed into in pulse form, and the pulse time is 4 s;

[0055] (4) After completing a pulse, use high-purity nitrogen to purge, and the cleaning time is 26s;

[0056] The above-mentioned (1)-(4) steps are repeated 250 times to obtain Nb with a certain thickness x C thin f...

Embodiment 3

[0058] Nb with niobium ethoxylate as Nb source and furfural as carbon source x C thin film atomic layer deposition method, including the following processes:

[0059] (1) With TaN as the substrate, the deposition temperature is 300°C, the Nb source is heated to 105°C to vaporize it, high-purity nitrogen is used as the carrier gas, and the gas phase source is introduced, the carrier gas flow rate is 40sccm, and the pulse time is 9s;

[0060] (2) Use high-purity nitrogen to purge after completing a pulse, and the purge time is 18s;

[0061] (3) carbon source furan furfural heating temperature is 75 ℃, makes it vaporize, with high-purity nitrogen as carrier gas, carrier gas flow rate is 200 sccm, feeds formaldehyde in pulse form, pulse time is 6s;

[0062] (4) After completing a pulse, use high-purity nitrogen to purge, and the cleaning time is 30s;

[0063] The above (1)-(4) steps are repeated 300 times to obtain Nb with a certain thickness x C thin film, after measurement, ...

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Abstract

The invention discloses an atomic layer deposition technique for growing Nb x The invention discloses a C film method, which belongs to the field of nanometer materials. The method of the present invention comprises the following steps: (1) placing the substrate in a reaction chamber, feeding a gaseous Nb source into the reaction chamber in a pulse form under vacuum conditions for deposition; (2) filling the system with an inert gas for purging (3) The carbon source is passed into the reaction chamber in the form of pulses, and the Nb source deposited on the substrate is subjected to a single-atom reaction to obtain a single-atom layer of Nb x C thin film, the carbon source is one of glucose, fructose, and furfurfural; (4) fill in an inert gas for purging, complete an ALD cycle, and repeat the above cycle many times to obtain a certain thickness of Nb x C film. The present invention adopts the combination of Nb source and carbon source of niobium ethoxylate, which is further applied in atomic layer deposition technology, so that it can be deposited on a nanoscale substrate to form Nb-containing x C deposition layer.

Description

technical field [0001] The invention relates to an atomic layer deposition technique for growing Nb x The invention discloses a C film method, which belongs to the field of nanometer materials. Background technique [0002] Niobium carbide (Nb x C) It has high melting point, good chemical stability, corrosion resistance, high melting point and other characteristics, and is widely used in powder metallurgy, electronics industry and solar cells. Now synthesize Nb x The methods of C include vacuum carbothermal reduction method, magnetron sputtering method, DC arc method, etc.; however, these methods are very difficult to synthesize nano-Nb x The C material has the problem that the particles and morphology are difficult to control. As we all know, the composition and morphology of nanomaterials are limited by the preparation method, which affects whether the material can be used in some specific application fields. At present, atomic layer deposition (ALD) has gradually bec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/32C23C16/455
CPCC23C16/32C23C16/45553
Inventor 丁玉强何冬梅杜立永
Owner JIANGNAN UNIV