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Annealing method of silicon wafer for PERC single crystal battery, silicon wafer for PERC single crystal battery and application

A technology of annealing and silicon wafers, which is applied in the field of solar cells, can solve problems such as the influence of the annealing process on the hydrophilicity of silicon wafers, and achieve good passivation effect and compact structure

Active Publication Date: 2021-03-12
江苏东磁新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the invention also does not mention the influence of the annealing process on the hydrophilicity of the silicon wafer, and there is still a large room for improvement

Method used

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  • Annealing method of silicon wafer for PERC single crystal battery, silicon wafer for PERC single crystal battery and application
  • Annealing method of silicon wafer for PERC single crystal battery, silicon wafer for PERC single crystal battery and application
  • Annealing method of silicon wafer for PERC single crystal battery, silicon wafer for PERC single crystal battery and application

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Embodiment 1

[0060] This embodiment provides a method for annealing silicon wafers for PERC monocrystalline cells and silicon wafers for PERC monocrystalline cells. The annealing method includes the following steps:

[0061] (1) Put the silicon chip into the quartz boat, push it into the furnace tube of the annealing furnace, keep the absolute pressure in the furnace tube as 1000mbar, and feed the nitrogen gas with a flow rate of 3000sccm for purging, and simultaneously feed the nitrogen gas with a flow rate of 500sccm, Make the nitrogen flow rate tend to be stable;

[0062] (2) evacuate until the absolute pressure in the furnace tube is 100mbar, and feed in nitrogen gas with a flow rate of 200sccm to purge for 190s to get rid of the waste gas around the silicon wafer in the furnace tube;

[0063] (3) Keep the absolute pressure in the furnace tube at 700mbar, and purge 290s with nitrogen gas with a flow rate of 15000 sccm to remove the residual impurities on the surface of the silicon wafe...

Embodiment 2

[0071] This embodiment provides a method for annealing silicon wafers for PERC monocrystalline cells and silicon wafers for PERC monocrystalline cells. The annealing method includes the following steps:

[0072] (1) silicon chip is put into quartz boat, pushes in the furnace pipe of annealing furnace, keeps the absolute pressure in the furnace pipe to be 800mbar, and feeds the nitrogen gas that flow velocity is 2500sccm to purge, and feeds the nitrogen gas that flow velocity is 450sccm additionally simultaneously, Make the nitrogen flow rate tend to be stable;

[0073] (2) evacuate until the absolute pressure in the furnace tube is 80mbar, and feed the nitrogen gas with a flow rate of 150sccm to purge for 180s to get rid of the waste gas around the silicon chip in the furnace tube;

[0074] (3) Keep the absolute pressure in the furnace tube at 650mbar, and feed nitrogen with a flow rate of 14000sccm for 280s to remove residual impurities on the surface of the silicon wafer in ...

Embodiment 3

[0082] This embodiment provides a method for annealing silicon wafers for PERC monocrystalline cells and silicon wafers for PERC monocrystalline cells. The annealing method includes the following steps:

[0083] (1) put the silicon chip into the quartz boat, push it in the furnace tube of the annealing furnace, keep the absolute pressure in the furnace tube as 1200mbar, and feed the nitrogen with a flow velocity of 3500sccm for purging, and simultaneously feed the nitrogen with a flow velocity of 550sccm, Make the nitrogen flow rate tend to be stable;

[0084] (2) evacuate until the absolute pressure in the furnace tube is 120mbar, and feed the nitrogen gas with a flow rate of 250sccm to purge for 200s to get rid of the waste gas around the silicon wafer in the furnace tube;

[0085] (3) Keep the absolute pressure in the furnace tube at 750mbar, and feed nitrogen with a flow rate of 16000sccm for 300s to remove residual impurities on the surface of the silicon wafer in the fur...

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Abstract

The invention provides an annealing method of a silicon wafer for a PERC single crystal battery, the silicon wafer for the PERC single crystal battery and application, and the annealing method comprises the following steps: (1) feeding the silicon wafer under a first absolute pressure, and introducing nitrogen for purging; (2) vacuumizing to a second absolute pressure, and introducing nitrogen forpurging; (3) maintaining a third absolute pressure, and introducing nitrogen for purging; (4) maintaining a fourth absolute pressure, stopping introducing nitrogen, and carrying out leakage detection; (5) maintaining a fifth absolute pressure, introducing oxygen for oxidation, and meanwhile, introducing nitrogen for purging; (6) taking out the silicon wafer under a sixth absolute pressure, and introducing nitrogen for purging; wherein the steps (1) to (6) are all carried out at the constant temperature of 660-700 DEG C. According to the annealing method, the hydrophilicity of the silicon wafer for the PERC single crystal cell is improved, meanwhile, residual impurities on the surface of the silicon wafer are effectively removed, and small white spots on the appearance are reduced.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and relates to a silicon chip for a PERC single crystal cell, in particular to an annealing method for a silicon chip for a PERC single crystal cell, and the silicon chip for a PERC single crystal cell and its application. Background technique [0002] PERC (Passivated Emitter and Rear Cell), that is, passivated emitter and rear cell technology, the monocrystalline cell prepared by this technology is called PERC monocrystalline cell. PERC technology originated in the 1980s. By stacking a passivation layer on the back of conventional cells, the conversion efficiency can be improved. The process flow of preparing PERC monocrystalline cells is divided into the following steps: texturing→diffusion→SE laser→oxidation→etching (removing PSG)→annealing→back film→positive film→back film laser groove→screen printing→sintering→ Optical injection or electrical injection → test sorting. [0003] In the ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/068
CPCH01L31/1864H01L31/1868H01L31/1804H01L31/0682Y02P70/50
Inventor 方超炎何悦任勇张逸凡
Owner 江苏东磁新能源科技有限公司
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