Dense circulation wave suppression drying film preparation method and equipment

A drying and equipment technology, which is applied in the field of dense-loop wave suppression drying film production methods and equipment, can solve the problems of film surface ripples and the difficulty of stable drying on the liquid film surface, so as to suppress surface ripples, improve optoelectronic performance, and reduce production. cost effect

Pending Publication Date: 2021-03-16
XI AN JIAOTONG UNIV
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  • Description
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  • Application Information

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Problems solved by technology

[0004] In order to overcome the shortcomings of the above-mentioned prior art, the object of the present invention is to provide a method and equipment for forming a film by dense circular flow suppression and drying, so as to solve the problem that the surface of the liquid film is undulated by the disturbance of the air flow during the liquid film drying process, so that it is difficult to achieve stable drying on the surface of the liquid film. , the surface of the formed film has the problem of ripples

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  • Dense circulation wave suppression drying film preparation method and equipment

Examples

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Effect test

Embodiment 1

[0036]1) Using DMF as a solvent, prepare CH with a concentration of 30% by mass 3 NH 3 PB 3 solution, spray a layer of configured perovskite solution on the conductive glass substrate ITO by slit coating, and obtain a light yellow liquid film with a thickness of about 2 μm on the conductive glass substrate ITO.

[0037] 2) Drying at 25°C with dense circular flow suppression, the saturated vapor pressure of the solvent at this temperature is 2200Pa, and the perovskite solution is placed in a 5mm interval with air grooves for inhalation and air grooves for ventilation, The flow rate of the air tank used for ventilation is 100LPM, the air temperature is 25°C, and the area of ​​the dry liquid film is 250mm×250mm. By controlling the dry air chamber to maintain 1000Pa, the pressure difference between the solvent and the chamber pressure is 1200Pa, and the solvent quickly Volatilization, the liquid film has a very high degree of saturation, which satisfies the nucleation conditions...

Embodiment 2

[0040] 1) With the mixed solvent of DMF and DMSO as solvent, prepare FA with a concentration of 35% by mass 0.8 MA 0.15 Cs 0.05 PB 3 solution, a layer of prepared perovskite solution was scraped on the conductive glass substrate FTO to obtain a light yellow liquid film with a thickness of about 3 μm.

[0041] 2) Air extraction and drying are carried out at 70°C. The saturated vapor pressure of the solvent is 5900Pa at this temperature. The flow rate of the air tank for ventilation is 150LPM, the air temperature is 70°C, and the area of ​​the dry liquid film is 500mm×500mm. By controlling the dry air chamber to maintain 3000Pa, the pressure difference between the solvent and the chamber pressure is 2900Pa. The solvent evaporates quickly and the liquid The film has a very high degree of saturation, which meets the nucleation conditions, and the liquid film nucleates and grows heterogeneously on the rough substrate. The solvent evaporated within 5s, and the obtained film was ...

Embodiment 3

[0044] Step 1) with NMP as solvent, the preparation mass percent concentration is 50% CsSnI 3 Solution, coating a layer of configured perovskite solution on the ITO flexible conductive substrate to obtain a light yellow liquid film with a thickness of about 3 μm.

[0045] Step 2) Air extraction and drying are carried out at 70° C., the saturated vapor pressure of the solvent at this temperature is 5900 Pa, and the perovskite solution is placed at a distance of 50 mm, which is provided with air grooves for suction and air grooves for ventilation. The flow rate of the air tank for ventilation is 200LPM, the air temperature is 70°C, and the area of ​​the dried liquid film is 1000mm×1000mm. By controlling the drying chamber to maintain 1000Pa, the pressure difference between the solvent and the chamber pressure is 4900Pa, and the solvent evaporates quickly. The liquid film has a very high degree of saturation, which satisfies the nucleation conditions, and the liquid film nucleate...

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Abstract

The invention discloses a dense circulation wave suppression drying film preparation method and equipment, and belongs to the technical field of photovoltaic technologies and film preparation. The method comprises the following steps: 1) placing a solar cell substrate coated with a perovskite liquid film in a dense circulation drying air chamber; and 2) drying the perovskite liquid film by adopting high-speed dilution circulation of 10-100 m / s, extracting a solvent component in the boundary layer of the perovskite liquid film by high-speed dilution circulation, diluting and taking away the solvent component in the air chamber, inhibiting the perovskite liquid film from generating undulating ripples by controlling the conditions in the dense circulation drying air chamber, carrying out heattreatment on the perovskite film subjected to air extraction and drying treatment, removing the residual solvent and enabling crystal grains to grow up, and finally obtaining the compact and ripple-free perovskite film. According to the invention, the state of the boundary layer on the surface of the perovskite liquid film can be regulated and controlled, the surface ripple phenomenon of the perovskite liquid film in the rapid drying process is suppressed, and the photoelectric performance of a perovskite solar cell is improved.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic technology and thin film preparation, relates to the preparation of large-area thin films by a solution method and its application in perovskite solar cells, and specifically relates to a method and equipment for dense circular flow suppression and drying of thin films. Background technique [0002] In the field of photovoltaics, organo-metal halides with a perovskite structure, as a light-absorbing material, have attracted great attention in the photovoltaic industry due to their advantages such as high photoelectric conversion efficiency, low-cost solution manufacturing, and simple process flow. Since it first came out in 2009 with a photoelectric conversion efficiency of 3.8%, it has made rapid progress in the past ten years, and the current small area (0.1cm 2 ) Solar cell efficiency has exceeded 25%, large area (> 1cm 2 ) Solar cell efficiency has exceeded 20%. As the basic photoele...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/42
CPCH10K71/00H10K71/40H10K30/10Y02E10/549
Inventor 杨冠军刘梅军张高刘研李长久
Owner XI AN JIAOTONG UNIV
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