Organic light-emitting superlattice film as well as preparation method and application thereof

A light-emitting thin film and superlattice technology, which is applied in semiconductor/solid-state device manufacturing, nanotechnology for materials and surface science, nanotechnology, etc., can solve problems affecting the photoelectric properties of organic superlattice, and achieve excellent luminous intensity And the effect of stability, good contact and high film quality

Active Publication Date: 2021-03-16
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The island-like amorphous growth of organic thin films, the defects of organic heterojunction interfaces and other factors have a great imp

Method used

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  • Organic light-emitting superlattice film as well as preparation method and application thereof
  • Organic light-emitting superlattice film as well as preparation method and application thereof
  • Organic light-emitting superlattice film as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Preparation of Me-PTCDI / PTCDA / Me-PTCDI / PTCDA organic light-emitting superlattice thin films:

[0034] (1) Preparation of substrate: The single crystal h-BN is thinned by the traditional mechanical exfoliation method, and the thinned two-dimensional single crystal BN film is transferred to SiO with a thickness of 275nm through scotch tape. 2 a. Under the 10x objective lens through an optical microscope, a BN film with a transparent lavender color and no scotch tape residue on the surface was selected as the BN / SiO grown on the first layer of organic film 2 substrate. In this embodiment, h-BN is selected as the substrate material, because the surface of two-dimensional h-BN is flat and has no dangling bonds, and through the van der Waals interaction between two-dimensional h-BN and organic small molecules, epitaxial growth on its surface has the same flatness organic film materials.

[0035] (2) Growth of the first layer of organic luminescent film: Pour about 2.4 mg o...

Embodiment 2

[0048] The organic light-emitting superlattice film prepared in Example 1 was applied to an organic light-emitting field-effect transistor.

[0049] Using a probe, two gold electrodes with a thickness of 100nm and a length of 250μm were non-destructively transferred to the surface of the PTCDA / Me-PTCDI / PTCDA / Me-PTCDI superlattice as the source / drain electrodes of the transistor; the device was based on SiO 2 As the gate insulating layer, Si is used as the gate, and PTCDA / Me-PTCDI / PTCDA / Me-PTCDI organic light-emitting superlattice material is used as the light-emitting layer, and the following is obtained: Figure 7 An organic light-emitting field-effect transistor with the structure shown.

[0050] Because PTCDA / Me-PTCDI / PTCDA / Me-PTCDI films have extremely strong luminous intensity, they have great application prospects in the fields of display technology, optoelectronic integration, and solid-state lasers.

Embodiment 3

[0052] Referring to steps (1) to (2) of Example 1 to prepare Me-PTCDI organic light-emitting thin films, the difference is that in step (2), the BN / SiO 2 The substrate material was placed in the downwind area of ​​13cm in the air extraction direction, and the growth temperature of the Me-PTCDI thin film was set to 217°C, and the growth time was 30min. -PTCDI organic light emitting film.

[0053] The bright field photograph under the 150 times objective lens of the optical microscope ( image 3In (a)), we found that the surface of the transparent light purple BN substrate with a thickness below 20 nm is covered with a uniform and dense dark purple region, that is, the Me-PTCDI film grown on the BN substrate. Irradiate the sample with an LED light source with a wavelength of 450nm, and the Me-PTCDI thin film area excites red fluorescence with a certain luminous brightness, such as image 3 (b). A high-quality layered Me-PTCDI luminescent film was prepared by this method.

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Abstract

The invention discloses an organic light-emitting superlattice film and a preparation method and application thereof, and belongs to the field of organic semiconductor photoelectric materials. The organic light-emitting superlattice film is an organic light-emitting film formed by alternate epitaxial growth of two two-dimensional organic molecules on the surface of a substrate, and the two-dimensional organic molecules are selected from 3,4,9,10-perylenetetracarboxylic dianhydride, N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic diimide, N,N'-dioctyl-3,4,9,10-perylenedicarboximide and 3,4,9,10-Perylenetetracarboxylic diimide. The preparation method comprises the following steps: placing a growth source material of a first two-dimensional organic molecule and a substrate at different positions of a tube furnace, and epitaxially growing a first layer of organic light-emitting film on the surface of the substrate; replacing a growth source material with a second two-dimensional organic molecule, and growing a second layer of organic light-emitting film; and repeatedly replacing the growth source material, and alternately growing multiple layers of organic light-emitting films to obtainthe organic light-emitting superlattice film. The organic light-emitting superlattice thin film has high quality and high light-emitting intensity, and can be used as a light-emitting layer of an organic light-emitting field effect transistor.

Description

technical field [0001] The invention relates to a high-quality organic luminescent superlattice thin film and its preparation method and application, belonging to the technical field of organic semiconductor photoelectric materials. Background technique [0002] A superlattice is a multilayer film structure composed of two or more semiconductor layers with different energy bands that grow alternately. Thin layers of different materials grow alternately to form periodic potential wells. When the barrier width is reduced to the same scale as the mean free path of carriers, the wave functions of electrons in adjacent potential wells can overlap, and the electron movement presents a certain Wholeness. By controlling the lattice period in the superlattice to engineer the electronic bands in the material, the carrier properties of the raw material can be artificially modified. [0003] The concept of the original semiconductor superlattice was proposed in 1970 when studying nega...

Claims

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Application Information

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IPC IPC(8): H01L51/54H01L51/50H01L51/52H01L51/56B82Y30/00B82Y40/00
CPCB82Y40/00B82Y30/00H10K71/164H10K85/623H10K85/633H10K50/11H10K50/30H10K71/00
Inventor 王欣然陶鎏赵慧娟
Owner NANJING UNIV
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