Semiconductor device
A semiconductor, conductive type technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as the reduction of the withstand voltage of semiconductor devices
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no. 1 Embodiment approach
[0023] figure 1 It is a plan view showing the semiconductor device of the first embodiment.
[0024] figure 2 yes figure 1 The II-II section view.
[0025] exist figure 1 In , the semi-insulating layer 30, the insulating layer 31, the insulating layer 32, and the insulating portion 33 are omitted.
[0026] The semiconductor device 100 of the first embodiment is a diode. Semiconductor device 100 such as figure 1 and figure 2 As shown, there are semiconductor layer SL, lower electrode 21 (first electrode), upper electrode 22 (second electrode), EQuivalent-PotentialRing (EQPR, equipotential ring) electrode 23 (third electrode), semi-insulating layer 30, The insulating layer 31 , the insulating layer 32 and the insulating portion 33 .
[0027] The semiconductor layer SL has n － Type (first conductivity type) semiconductor region 1 (first semiconductor region), p-type (second conductivity type) semiconductor region 2 (second semiconductor region), n + Type EQPR region 3...
no. 2 Embodiment approach
[0108] Figure 9 It is a cross-sectional view showing a part of the semiconductor device according to the second embodiment.
[0109] The semiconductor device 200 of the second embodiment is a MOSFET. Such as Figure 9 As shown, compared with the semiconductor device 100, the semiconductor device 200 also has n + Type source region 6 (fourth semiconductor region) and gate electrode 15 .
[0110] p + Type contact area 5 and n + The p-type source region 6 is selectively disposed above the p-type semiconductor region 2 . The gate electrode 15 faces the p-type semiconductor region 2 with the gate insulating layer 15 a interposed therebetween. exist Figure 9 In the example shown, the gate electrode 15 is also connected with n － type semiconductor region 1 part and n + Type source region 6 is opposite. For example, p-type semiconductor region 2, p + Type contact area 5, n + A plurality of source regions 6 and gate electrodes 15 are provided in the X direction, and each ...
no. 3 Embodiment approach
[0116] Figure 10 It is a cross-sectional view showing a part of the semiconductor device of the third embodiment.
[0117] The semiconductor device 300 is an IGBT. The semiconductor device 300 differs from the semiconductor device 200 in that instead of n + type contact region 4 with p + type collector region 7 (fifth semiconductor region) and n-type buffer region 8 . p + type collector region 7 is provided on the lower electrode 21 and n － Type semiconductor region 1 between. The n-type buffer region 8 is set at p + type collector region 7 with n － Type semiconductor region 1 between. The n-type impurity concentration in the n-type buffer region 8, ratio n － The n-type impurity concentration in the type semiconductor region 1 is higher than n + The n-type impurity concentration in the n-type source region 6 is low.
[0118] The operation of the semiconductor device 300 will be described.
[0119] In a state where a positive voltage is applied to the lower electro...
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