N-type bismuth telluride-based thermoelectric material and preparation method thereof

A technology based on bismuth telluride and thermoelectric materials, which is applied in the direction of thermoelectric device node lead-out materials, thermoelectric device manufacturing/processing, etc., can solve the problems that restrict the development of p-type materials and thermoelectric devices, and increase the effective mass of electrons, Realization of ZT value and reduction of thermal conductivity

Active Publication Date: 2021-03-19
深圳热电新能源科技有限公司
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the most common thermoelectric device is a flat-plate device, which needs to connect the thermoelectric arms made of p-type and n-type thermoelectric materials to work in series. The ZT value of p-type bismuth telluride-based materials has reached more than 1.3 in existing studies, while The ZT value of n-type materials prepared by the commercialized zone melting method is only about 1.0, which seriously restricts the development of p-type materials and thermoelectric devices.

Method used

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  • N-type bismuth telluride-based thermoelectric material and preparation method thereof
  • N-type bismuth telluride-based thermoelectric material and preparation method thereof
  • N-type bismuth telluride-based thermoelectric material and preparation method thereof

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Embodiment 1

[0047] High-purity Bi, Te, Se particles according to Bi 2 Te 2.7 Se 0.3 The stoichiometric ratio is mixed and smelted. The smelting treatment includes: heating up to 600°C at a heating rate of 3°C / min, holding for 1 hour, then raising the temperature to 850°C at a heating rate of 1.5°C / min, holding for 5 hours, and then furnace cooling to room temperature, Bi 2 Te 2.7 Se 0.3 Ingot.

[0048] Bi 2 Te 2.7 Se 0.3 After the ingot was pre-ground, it was mixed with 5wt% high-purity Sb particles, and ball milled at 450r / min for 10h to obtain Bi 2 Te 2.7 Se 0.3 +5 wt% Sb powder.

[0049] the Bi 2 Te 2.7 Se 0.3 +5wt% Sb powder was subjected to spark plasma sintering, the sintering temperature was 450°C, the sintering pressure was 50MPa, and the sintering time was 5min, and a columnar block of Φ10*10 was prepared. After cutting, the maximum ZT value is 1.3 (400K), and the average ZT value is ZT ave It is 1.0 (300 ~ 575K).

[0050] The prepared product was characterized b...

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Abstract

The invention discloses an n-type bismuth telluride-based thermoelectric material and a preparation method thereof. The chemical composition of the n-type bismuth telluride-based thermoelectric material is Bi2Te2.7Se<0.3+x> wt% Sb, and the x is greater than 0 and is less than or equal to 10. In the n-type bismuth telluride-based thermoelectric material, a metal Sb nano phase is dispersed in Bi2Te2.7Se0.3, and low-energy carriers can be scattered by utilizing an energy filtering effect of a Schottky barrier of a Bi2Te2.7Se0.3 and Sb contact interface, so the effective mass of electrons is increased, and the power factor of the material is improved. Meanwhile, the uniformly dispersed Sb can enhance the scattering of the interface to the low-frequency phonons and reduce thermal conductivity of the material. The method is advantaged in that Sb doping can optimize the electric and thermal transmission performances at the same time, and improvement of the ZT value of the n-type bismuth telluride-based thermoelectric material is realized.

Description

technical field [0001] The invention relates to the technical field of thermoelectric materials, in particular, the invention relates to an n-type bismuth telluride-based thermoelectric material and a preparation method thereof. Background technique [0002] Thermoelectric conversion technology is a new type of green energy technology that can realize the direct mutual conversion between heat energy and electric energy. effect. Thermoelectric devices have the advantages of no mechanical transmission parts, no noise and no pollution during operation, and have broad application prospects in the fields of thermoelectric power generation and thermoelectric refrigeration. Their energy conversion efficiency mainly depends on the dimensionless thermoelectric figure of merit (ZT value) of thermoelectric materials. : ZT=(S 2 σ)T / κ, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the thermodynamic absolute temperature, and κ is the thermal conductivity. D...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16H01L35/34
CPCH10N10/852H10N10/01
Inventor 何佳清王江舵何思维杨晨舒忠
Owner 深圳热电新能源科技有限公司
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