Preparation method of composite concave angle micron structure with super-amphiphobic property
A micron-structured, super-amphiphobic technology, which is applied in the field of preparation of composite concave-corner micro-structures, can solve the problems of inconspicuous nano-structured concave-corner structure features, poor wear resistance of nano-scale structures, and affecting application potential, and achieve excellent super-amphiphobic performance, good wear resistance, simple preparation process
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Embodiment 1
[0035] The photolithographic mask pattern is selected as a non-parallel square array with a side length of 50 microns and a pitch of 50 microns. The specific implementation process is as follows:
[0036] Glass is selected as the substrate material, and a silicon layer with a thickness of 5 microns is deposited on the surface by physical vapor phase.
[0037] Preparation of photoresist layer: spin-coat photoresist AZ5214 on the silicon surface, spin-coating speed is 4000 rpm, spin-coating time is 40s, photoresist thickness is 1 micron, and the photoresist is baked at 90°C for 1min. pre-curing;
[0038] Photolithography exposure: the light intensity is 23mj / cm 2 UV light exposure for 5s;
[0039] Developing: place in developer solution AZ 300MIF, developing time is 20s, the exposed photoresist is dissolved to form a microcolumn array of photoresist;
[0040] Deep silicon etching: use the photoresist micropillar array as an etching mask, use deep silicon etching technology to...
Embodiment 2
[0043] The photolithographic mask pattern is selected as a square array with a side length of 50 microns and a pitch of 50 microns arranged in parallel. The specific implementation process is as follows:
[0044] Metal nickel is selected as the substrate material, and a 3 micron thick silicon layer is deposited on the surface of the nickel sheet by physical vapor phase;
[0045] Preparation of photoresist layer: Spin-coat photoresist S1813 on the silicon surface, spin-coating speed is 3000 rpm, spin-coating time is 40s, photoresist thickness is 1.5 microns, bake 1.5min at 110°C for photoresist carry out pre-curing;
[0046] Photolithography exposure: the light intensity is 38mj / cm 2 UV light exposure for 2.5s;
[0047]Developing: Place in developer solution AZ300MIF, developing time is 40s, the exposed photoresist is dissolved to form a microcolumn array of photoresist;
[0048] Deep silicon etching: use the photoresist micropillar array as an etching mask, use deep silicon...
Embodiment 3
[0051] The photolithographic mask pattern is selected as a square array with a side length of 50 microns and a pitch of 25 microns in parallel. The specific implementation process is as follows:
[0052] Select glass as the substrate material, and use physical vapor deposition on the surface of the nickel sheet to deposit a silicon layer with a thickness of 4 microns;
[0053] Preparation of photoresist layer: Spin-coat photoresist AZ5214 on the silicon surface, spin-coating speed is 6000 rpm, spin-coating time is 60s, photoresist thickness is 0.8 microns, and the photoresist is baked at 120°C for 1min. pre-curing;
[0054] Photolithography exposure: the light intensity is 45mj / cm 2 Exposure to UV light for 2s;
[0055] Developing: Place in developer solution AZ300MIF, developing time is 45s, the exposed photoresist is dissolved to form a microcolumn array of photoresist;
[0056] Deep silicon etching: using the photoresist micropillar array as an etching mask, using deep s...
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