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SiCNO-based piezoresistive thin film system and preparation method thereof

A technology of film and base pressure, applied in the field of SiCNO-based piezoresistive film system and its preparation, can solve problems such as unreported, and achieve the effects of good adhesion, controllable composition, and low temperature of composition

Active Publication Date: 2021-04-30
WENZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the research on the piezoresistive properties of PDC materials is still in its infancy at home and abroad, and the research on the preparation of PDC piezoresistive films by magnetron sputtering has not been reported yet.

Method used

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  • SiCNO-based piezoresistive thin film system and preparation method thereof
  • SiCNO-based piezoresistive thin film system and preparation method thereof
  • SiCNO-based piezoresistive thin film system and preparation method thereof

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Embodiment

[0022] Embodiment: A SiCNO-based piezoresistive film system, including a stainless steel substrate 1, on which a silicon nitride film layer 2, a SiBCN film layer 3, and a Co-doped SiCNO film layer 4 are sequentially arranged, and a Co-doped SiCNO film layer 4 is provided with an electrode 6 via a SiAlCN thin film layer 5 .

[0023] The silicon nitride film layer has a thickness of 1-5 microns, preferably 2 microns, as an insulating layer.

[0024] The SiBCN thin film layer has a thickness of 500-700nm, preferably 600nm, and is used as an intermediate layer to enhance the bonding strength of the interface.

[0025] The thickness of the Co-doped SiCNO thin film layer is 800-1000nm, and the optimum is 900nm. As the main pressure-sensitive material, it has the characteristics of large piezoresistive coefficient and high temperature resistance.

[0026] The thickness of the SiAlCN film layer is 100-300nm, preferably 200nm, which is used to enhance the adhesion between the piezores...

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Abstract

The invention discloses a SiCNO-based piezoresistive thin film system and a preparation method thereof. The SiCNO-based piezoresistive thin film system comprises a stainless steel substrate, a silicon nitride thin film layer, a SiBCN thin film layer and a Co-doped SiCNO thin film layer are sequentially arranged on the stainless steel substrate, and an electrode is arranged on the Co-doped SiCNO thin film layer through a SiAlCN thin film layer. A stainless steel sheet at the bottommost layer serves as a substrate of a whole film system, a silicon nitride thin film prepared on the substrate serves as an insulating layer, a Co-doped SiCNO thin film serves as a main pressure-sensitive material, and a SiBCN thin film is arranged between the Co-doped SiCNO thin film and a silicon nitride insulating layer to serve as a middle layer. The silicon nitride thin film layer, the SiBCN thin film layer and the Co-doped SiCNO thin film layer form a multi-layer thin film structure, so that a good mechanical gradient is formed, the SiAlCN thin film layer is arranged between the Co-doped SiCNO thin film layer and the electrode, and the adhesiveness between a piezoresistive thin film system and the electrode is enhanced; experimental test results show that the SiCNO-based piezoresistive thin film system has excellent piezoresistive characteristics and mechanical stability.

Description

technical field [0001] The invention relates to the technical field of multilayer thin film electrodes, in particular to a SiCNO-based piezoresistive thin film system and a preparation method thereof. Background technique [0002] More and more fields such as aerospace, automobile, oil exploration, military and so on urgently need pressure sensors with good performance under high temperature conditions. In civilian use, it can be used to measure the pressure in high-temperature oil wells, coal-fired gas boilers, high-temperature reaction vessels and various engine cavities. For example, the internal working temperature of the aero-engine combustion chamber is generally above 1000 ° C. The research on high-temperature pressure sensors is very important for improving energy efficiency. It is very important to reduce harmful emissions. In the military, it can be used for pressure measurement in heat-resistant cavities such as ship engines, rockets, missiles, and satellites. A...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/34
CPCC23C14/0652C23C14/0664C23C14/0676C23C14/0036C23C14/3464
Inventor 廖宁波
Owner WENZHOU UNIVERSITY
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