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Broadband efficient GaN internal matching power tube

An internal matching, power tube technology, applied in the field of broadband high-efficiency GaN internal matching power tube, can solve the problem of not fully meeting the requirements of power amplifiers, and achieve the effect of achieving system miniaturization, high-efficiency output, and low power consumption requirements

Pending Publication Date: 2021-04-30
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Both the first-generation semiconductors represented by Ge and Si and the second-generation semiconductors represented by GaAs can no longer fully meet the system's requirements for power amplifiers.

Method used

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  • Broadband efficient GaN internal matching power tube
  • Broadband efficient GaN internal matching power tube
  • Broadband efficient GaN internal matching power tube

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] where L 1 Using distributed parameter inductors, the unilateral inductance value is about 0.465nH, and the unilateral resistance R 1 The resistance is 0.75Ω, C 1 It is a ceramic capacitor with a capacitance of 1000pF and has a decoupling function. C gs It is the die gate-source capacitance, the capacitance corresponding to the impedance at the best efficiency is about 1.2pF / mm, and the capacitance value of a single die is 66pF. The calculation of its corresponding resonance frequency can be simplified as shown in Formula 1:

[0033] Formula 1

[0034] Its resonant frequency is 1.28GHz.

[0035] The calculation of its quality factor is shown in formula 2:

[0036] Formula 2

[0037] Its quality factor is 5, and its corresponding relative bandwidth is about 1 / Q, which is 20%. The reduction of the quality factor can effectively increase the bandwidth, but if the quality factor is too low, the gain will be reduced, and it is selected according to the bandwidth...

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Abstract

The invention relates to a novel broadband high-efficiency GaN internal matching power tube. The input and output of the power tube employ a band-pass matching network in a multi-stage impedance conversion mode, and a matching element is manufactured on a ceramic substrate. An inductor, a capacitor and a resistor series circuit are connected in parallel to the ground at the position close to the grid end of the GaN HEMT tube core to form a parallel resonance network with a Cgs series resistor Rin of the GaN HEMT. Through optimization, the network forms parallel resonance in a fundamental frequency band, so the input impedance realizes efficiency matching in a wider frequency band; meanwhile, certain loss is introduced into the network, so the low-frequency gain is reduced, the amplifier stability is effectively improved, the standing wave is improved, and the bandwidth is expanded. The series resistor Rin is introduced, so the input impedance can be improved, and the improvement of the impedance is beneficial to realizing broadband impedance matching for the high-power GaN HEMT device. According to the invention, the realization difficulty of broadband matching of the GaN HEMT device is effectively reduced, so the broadband high-efficiency GaN power tube is more and more widely used.

Description

technical field [0001] The invention is a broadband high-efficiency GaN internal matching power tube, which belongs to the technical field of microwave power amplifiers. Background technique [0002] As wireless systems such as radar and communication continue to increase the requirements for front-end modules with multiple functions, fast response, anti-interference, high reliability and mobility, miniaturized, high-efficiency, and broadband microwave power amplifiers have become the current research trend. Both the first-generation semiconductors represented by Ge and Si and the second-generation semiconductors represented by GaAs can no longer fully meet the system's requirements for power amplifiers. The third-generation semiconductor materials represented by GaN have the characteristics of wide band gap, high electron mobility, high electron saturation rate, high breakdown voltage, high thermal conductivity, good chemical stability and strong radiation resistance. High...

Claims

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Application Information

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IPC IPC(8): H03F1/56H03F3/21
CPCH03F1/56H03F3/21
Inventor 钟世昌时晓航景少红王帅李飞曹建强杨文琪
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD