Preparation method of micro-cantilever
A technology of micro-cantilever and dry etching, which is applied in the direction of micro-structure technology, micro-structure devices, manufacturing micro-structure devices, etc., can solve the problems of low sensitivity and poor performance of micro-cantilever, and achieve excellent performance and good adsorption force , Improve performance and sensitivity
Pending Publication Date: 2021-05-04
江西德瑞光电技术有限责任公司
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Problems solved by technology
[0005] Based on this, the purpose of the present invention is to provide a method for preparing a micro-cantilever to solve the technical problems of poor performance and low sensitivity of the existing micro-cantilever
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Embodiment 1
[0031] see Figure 1-Figure 2 , shows the preparation method of the micro-cantilever in the first embodiment of the present invention, including step S01-step S06.
[0032] Step S01, providing a substrate, and epitaxially growing Al on the upper surface of the substrate X Ga 1-X As TLC.
[0033] Wherein, the substrate is preferably a GaAs substrate, and its size is preferably 2-6 inches, such as 2 inches, 3 inches, 4 inches or 6 inches. Secondly, the substrate is preferably a clean substrate, such as a steel substrate. prepared GaAs substrates to ensure subsequent al 2 o 3 Yield of wafer preparation.
[0034] In specific implementation, semiconductor epitaxial growth technology can be used to epitaxially alternately grow Al on the upper surface of the substrate. X Ga 1-X As TLC. Preferably, Al X Ga 1-X The layer thickness of the As thin layer is controlled between 5nm and 10μm, so that the subsequent preparation of Al 2 o 3 The thickness of the micro-cantilever bea...
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Abstract
The invention provides a preparation method of a micro-cantilever, which comprises the following steps: providing a substrate, and epitaxially growing an AlXGa1-XAs thin layer on the upper surface of the substrate; spin-coating a first photoresist on the upper surface of the AlXGa1-XAs thin layer, and exposing and developing the first photoresist through a first photoetching mask plate to obtain a photoresist micro-cantilever pattern; etching the AlXGa1-XAs thin layer and the substrate by taking the photoresist micro-cantilever pattern as a mask, and etching through the AlXGa1-XAs thin layer and etching part of the substrate; oxidizing the AlXGa1-XAs thin layer into an Al2O3 thin layer; spin-coating second photoresist on the upper surfaces of the Al2O3 thin layer and the substrate, and exposing and developing the second photoresist layer to form a window on one side of the Al2O3 thin layer; and selectively corroding part of the substrate material at the lower part of the Al2O3 thin layer from the window in the side direction. The invention provides a novel feasible preparation method and approach for the micro-cantilever, the micro-cantilever structure taking Al2O3 as the material is mainly prepared, and the GaAs material is taken as the substrate, so that the performance and the sensitivity of the micro-cantilever are effectively improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a preparation method of a micro-cantilever beam. Background technique [0002] MEMS technology has cross-integrated a variety of disciplines, involving microelectronics, mechanics, materials science, mechanics, acoustics, optics, electronic information and other disciplines. As a future direction of concentrated development of microtechnology, it is the product of the combination of microelectronics and precision machining technology. It is developing in the direction of miniaturization, low cost, light weight, low energy consumption, high reliability, high sensitivity, etc. Due to its advantages of miniaturization, it is widely used in chemical, physical, biological measurement, electronic equipment, automobile manufacturing and military fields, etc. The industry has very broad prospects for development. [0003] Among the various types of MEMS sensors, the micro...
Claims
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Login to View More IPC IPC(8): B81C1/00
CPCB81C1/0015B81C2201/013
Inventor 高阳李春勇舒凯仇伯仓柯毛龙徐化勇冯欧
Owner 江西德瑞光电技术有限责任公司