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Display panel and manufacturing method thereof

A technology for a display panel and a manufacturing method, which is applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of low production efficiency of low-temperature polysilicon, high production energy consumption, shorten production time, improve utilization rate, and improve The effect of production efficiency

Pending Publication Date: 2021-05-07
BEIHAI HKC OPTOELECTRONICS TECH CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of this application is to provide a display panel and its manufacturing method, aiming to solve the technical problems of low-temperature polysilicon production efficiency and high production energy consumption

Method used

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  • Display panel and manufacturing method thereof
  • Display panel and manufacturing method thereof
  • Display panel and manufacturing method thereof

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Embodiment Construction

[0038] In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present application, not to limit the present application.

[0039] It should be noted that when a component is referred to as being “fixed on” or “disposed on” another component, it may be directly or indirectly located on the other component. When an element is referred to as being "connected to" another element, it can be directly or indirectly connected to the other element. The terms "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. The indicated orientation or position is based on the orientation or position shown in the drawings, and is only for convenience of description, a...

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Abstract

The invention is suitable for the technical field of display, and provides a display panel and a manufacturing method thereof. The manufacturing method of the display panel comprises the following steps: forming a reflecting layer on one side of a substrate; and sequentially forming a buffer layer and an amorphous silicon layer on one side, far away from the reflecting layer, of the substrate, and performing patterning treatment and laser annealing on the amorphous silicon layer to form an active layer. When laser penetrates through the amorphous silicon layer, the buffer layer and the substrate and then irradiates the reflecting layer, the reflecting layer can reflect the laser back to the amorphous silicon layer, and the utilization rate of the laser is greatly improved, so that even if the output energy of an ELA machine table is reduced, it can be guaranteed that the amorphous silicon layer is converted into polycrystalline silicon and forms an active layer, meanwhile, the production time can be shortened, the production efficiency can be improved, and the manufacturing cost of the display panel is reduced.

Description

technical field [0001] The present application belongs to the field of display technology, and in particular relates to a display panel and a manufacturing method thereof. Background technique [0002] With the various functional requirements of consumer electronics products in recent years, the technological development of flat panel displays has been driven, such as the characteristics of 4K / 8K, large size, high contrast, low power consumption and high color saturation. AMOLED (Active-matrix organic light-emitting diode, active-matrix organic light-emitting diode) is also the development trend of flat-panel displays around the world in the future because of its characteristics of no backlight, thinness, high contrast and high color saturation. [0003] AMOLED usually consists of a low temperature polysilicon (Low Temperature Poly-Silicon, LTPS) driven backplane and an electroluminescent layer to form a self-luminous component. Low-temperature polysilicon has high electron...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L21/77H01L27/32
CPCH01L27/1222H01L27/1259H10K59/12
Inventor 詹仁宏许哲豪袁海江
Owner BEIHAI HKC OPTOELECTRONICS TECH CO LTD
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