Heterojunction power device and manufacturing method thereof
A power device and heterojunction technology, applied in the field of microelectronics, can solve problems such as poor passivation process repeatability, and achieve the effects of suppressing current collapse effect, improving reverse voltage withstand capability, and increasing forward blocking voltage.
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Embodiment 1
[0061] Embodiment 1: Using a sapphire substrate to fabricate the floating island 5 and the leaky island 6 with a height f of 1 nm and a doping concentration of 4×10 15 cm -3 , the number of independent P-type semiconductor blocks in the floating island 5 is one, the number of semiconductor cuboid blocks in the drain island 6 is two, and the number of grooves is one heterojunction power device.
[0062]Step 1. Epitaxial GaN material is made transition layer 2 on sapphire substrate 1, as Figure 5 a.
[0063] 1a) GaN material with a thickness of 30nm is epitaxially grown on the sapphire substrate 1 by metal-organic chemical vapor deposition technology. The source flow rate is 20μmol / min;
[0064] 1b) GaN material with a thickness of 0.97 μm is epitaxially grown on the GaN material by metal-organic chemical vapor deposition technology to form an undoped transition layer 2. The process conditions are as follows: temperature is 960° C., pressure is 45 Torr, and hydrogen flow rat...
Embodiment 2
[0092] Embodiment 2: The height f of the floating island 5 and the leaky island 6 is 200 nm, and the doping concentration is 5×10 using a silicon carbide substrate. 17 cm -3 , the number of independent P-type semiconductor blocks in the floating island 5 is five, the number of semiconductor cuboid blocks in the drain island 6 is three, and the number of grooves is two heterojunction power devices.
[0093] Step 1. Epitaxially AlN and GaN materials on the silicon carbide substrate 1 to form the transition layer 2, such as Figure 5 a.
[0094] 1.1) Metal-organic chemical vapor deposition technology is used at a temperature of 1000° C., a pressure of 45 Torr, a flow rate of hydrogen gas of 4600 sccm, a flow rate of ammonia gas of 4600 sccm, and a flow rate of aluminum source of 5 μmol / min, on the silicon carbide substrate 1 Undoped AlN material with an epitaxial thickness of 100nm;
[0095] 1.2) Using metal-organic chemical vapor deposition technology, the epitaxial thickness...
Embodiment 3
[0118] Embodiment 3: Using a silicon substrate to make the floating island 5 and the leaky island 6, the height f is 400nm, and the doping concentration is 5×10 20 cm -3 A heterojunction power device in which the number of independent P-type semiconductor blocks in the floating island 5 is 7, the number of semiconductor cuboid blocks in the drain island 6 is 7, and the number of grooves is 6.
[0119] Step A. Epitaxial AlN and GaN materials on the silicon substrate 1 from bottom to top to make the transition layer 2, such as Figure 5 a.
[0120] A1) AlN material with a thickness of 400nm is epitaxially grown on the silicon substrate 1 by metal-organic chemical vapor deposition technology. The source flow rate is 25μmol / min;
[0121] A2) Use metal organic chemical vapor deposition technology to epitaxially GaN material with a thickness of 8.6 μm on AlN material to complete the fabrication of transition layer 2. The flow rate is 4000 sccm, and the gallium source flow rate i...
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