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Silicon-based negative electrode material and preparation method thereof, negative electrode, battery and electronic device

A silicon-based anode material, silicon-based technology, applied in battery electrodes, electrode carriers/current collectors, circuits, etc., can solve the problems affecting the performance of silicon-based anode materials, crushing silicon-based anode materials, and restricting the application of silicon-based anode materials. , to achieve the effect of improving cycle performance and stability, high film layer stability, and stable long-term performance.

Active Publication Date: 2022-03-29
GUANGDONG OPPO MOBILE TELECOMM CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, silicon-based negative electrode materials experience large volume changes during repeated charging and discharging, which may even cause silicon-based negative electrode materials to be crushed, affecting the performance of silicon-based negative electrode materials, which seriously restricts the application of silicon-based negative electrode materials.

Method used

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  • Silicon-based negative electrode material and preparation method thereof, negative electrode, battery and electronic device
  • Silicon-based negative electrode material and preparation method thereof, negative electrode, battery and electronic device
  • Silicon-based negative electrode material and preparation method thereof, negative electrode, battery and electronic device

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preparation example Construction

[0054] The present application also provides a method for preparing the silicon-based negative electrode material 10 , the preparation method prepares the silicon-based negative electrode material 10 in any one of the above-mentioned embodiments. see figure 2 , is a schematic flow diagram of a method for preparing a silicon-based negative electrode material provided in an embodiment of the present application, including:

[0055] Operation 101: forming a carbon layer on the surface of the silicon-based core.

[0056] Operation 102: forming a phenyl compound layer on the surface of the carbon layer to obtain a silicon-based negative electrode material, wherein the silicon-based negative electrode material includes a silicon-based core, a carbon layer covering the silicon-based core, and a phenyl compound layer covering the carbon layer.

[0057] In the embodiment of the present application, a silicon-based material is provided, and the silicon-based inner core is obtained aft...

Embodiment 1

[0067] A method for preparing a silicon-based negative electrode material, comprising:

[0068] 1kg of silicon-oxygen material (SiO, D 50 5 μm) into a vapor deposition furnace, under the protection of argon atmosphere, the temperature was raised to 950°C, 1000sccm of ethylene was passed in, after 5 hours of heat preservation, the introduction of ethylene was stopped, and the temperature was naturally cooled to room temperature under the argon atmosphere, and the powder Carrying out crushing and sieving to obtain a carbon layer-coated silicon-oxygen material.

[0069] Dissolve 50g of 4-vinylphenylacetic acid in 800mL of N-methylpyrrolidone, add 950g of carbon-coated silicon-oxygen material, stir and disperse evenly, and then heat to 120°C to completely volatilize the organic solvent to obtain a black powder. Then the above black powder was dried at -0.09MPa, 120°C for 2h to obtain the primary silicon-based negative electrode material. Finally, sieving and iron removal are car...

Embodiment 2

[0071] A method for preparing a silicon-based negative electrode material, comprising:

[0072] 1kg of silicon-oxygen material (SiO, D 50 5 μm) into a vapor deposition furnace, under the protection of argon atmosphere, the temperature was raised to 950°C, and 2000 sccm of ethylene was introduced, and after 8 hours of heat preservation, the introduction of ethylene was stopped, and the temperature was naturally cooled to room temperature under an argon atmosphere, and the powder Carrying out crushing and sieving to obtain a carbon layer-coated silicon-oxygen material.

[0073] Dissolve 20g of 4-vinylphenylacetic acid in 800mL of N-methylpyrrolidone, add 980g of carbon-coated silicon-oxygen material, stir and disperse evenly, and then heat to 120°C to completely volatilize the organic solvent to obtain a black powder. Then the above black powder was dried at -0.09MPa, 120°C for 2h to obtain the primary silicon-based negative electrode material. Finally, sieving and iron remova...

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Abstract

The application provides a silicon-based negative electrode material, comprising a silicon-based core, a carbon layer covering the silicon-based core, and a phenyl compound layer covering the carbon layer, the phenyl compound in the phenyl compound layer The structural formula is shown in formula (I): wherein, R 1 With carbon-carbon double bond or carbon-carbon triple bond, R 2 , R 3 , R 4 , R 5 and R 6 At least one substituent in has an organic acid group; or, R 1 It is an organic acid group having a carbon-carbon double bond or a carbon-carbon triple bond. The silicon-based negative electrode material has stable performance and high cycle efficiency, which is conducive to its wide application. The application also provides a preparation method of silicon-based negative electrode material, negative electrode, battery and electronic equipment.

Description

technical field [0001] The application belongs to the field of battery technology, and in particular relates to a silicon-based negative electrode material, a preparation method thereof, a negative electrode, a battery and electronic equipment. Background technique [0002] Existing silicon-based anode materials have attracted extensive attention due to their very high theoretical specific capacity. However, silicon-based negative electrode materials experience large volume changes during repeated charge and discharge, which may even cause silicon-based negative electrode materials to be crushed, affecting the performance of silicon-based negative electrode materials, thus severely restricting the application of silicon-based negative electrode materials. Contents of the invention [0003] In view of this, the present application provides a silicon-based negative electrode material with excellent performance. [0004] In a first aspect, the present application provides a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01M4/36H01M4/38H01M4/583H01M4/60H01M4/62H01M4/66H01M4/133H01M4/134
CPCH01M4/366H01M4/386H01M4/583H01M4/625H01M4/60H01M4/667H01M4/134H01M4/133Y02E60/10C01B33/02C01P2006/40H01M4/483H01M4/587H01M4/62H01M2004/021H01M2004/027
Inventor 陈溢镭
Owner GUANGDONG OPPO MOBILE TELECOMM CORP LTD
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