SiP module based on silicon switching four-layer three-dimensional stacking and manufacturing method
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- XIAN MICROELECTRONICS TECH INST
- Publication Date
- 2021-05-14
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Abstract
Description
technical field
[0001] The invention belongs to the field of SiP modules, and in particular relates to a SiP module based on silicon transfer four-layer three-dimensional stacking and a manufacturing method. Background technique
[0002] SiP (System in Package, SiP) is a high-performance module composed of one or more chips and passive devices stacked in a housing in the form of chip dies, so that the package is upgraded from a single chip to a system-on-chip. At present, in military fields such as aviation, aerospace, weapons, and industrial control fields such as oil and gas exploration, nuclear power units, and hybrid vehicles, SiP is favored because of its miniaturization, modularization, high reliability, and localization, and has become the solution to system integration. One of the main ways.
[0003] At present, the traditional two-dimensional assembly density of chips has reached the limit, which has limited ability to increase the density of system integrated SiP ...