Preparation method and growth device of N-type silicon carbide crystal

A growth device, a technology for silicon carbide, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems affecting the application and development of silicon carbide crystal properties, high dislocation density of silicon carbide substrates, etc.

Active Publication Date: 2021-05-18
SICC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For TSD and BPD, dislocation slip can occur, and when it hits a TED wall or other defects, the slip will stagnate, and dislocation accumulation will occur near the TED wall or defect

Method used

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  • Preparation method and growth device of N-type silicon carbide crystal
  • Preparation method and growth device of N-type silicon carbide crystal
  • Preparation method and growth device of N-type silicon carbide crystal

Examples

Experimental program
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Effect test

Embodiment 1

[0062] refer to Figure 1-3 , the present embodiment provides a device for growing N-type silicon carbide crystals, the device includes a furnace body 1 and a crucible 2, the furnace body 1 is provided with vent holes, and the crucible 2 is arranged in the furnace body 1; the top of the crucible 2 The outer wall is inwardly recessed to form an annular air groove 21 , the center of which is coincident with the center of circle at the top of the crucible 2 . The setting of the annular gas groove 21 enables the gas to flow along the annular gas groove 21, the gas flow rate is fast, and the gas diffuses into the crucible, so that the heat transfer in the crucible 2 away from the central axis is accelerated, and the radial temperature gradient of the crucible is reduced, thereby reducing Dislocation defects in silicon carbide crystals are eliminated, and the quality of crystal growth is improved.

[0063] Specifically, the structure of the crucible 2 is not specifically limited, a...

Embodiment 2

[0078] A method utilizing the device described in embodiment 1 to grow N-type silicon carbide crystals, specifically comprising the following steps:

[0079] (1) Assembling stage: place the silicon raw material and carbon raw material in the high-temperature zone of the crucible, and place the seed crystal in the low-temperature zone of the crucible; place the assembled crucible in the furnace body of the crystal growth furnace;

[0080] (2) Heating stage: adjust the temperature of the crystal growth furnace to raise the temperature from 500 to 2000°C, and control the pressure in the crucible from 0.2×10 5 Pa rises to 5×10 5 Pa, mark V1 is the flow rate of inert gas into the first vent hole, V2 is the flow rate of nitrogen source gas into the second vent hole, V3 is the flow rate of nitrogen source gas into the third vent hole; The flow rate of gas is 200mL / min, and the flow rate of nitrogen source gas into V3 or V2 is 100mL / min; thus, an axial temperature gradient is formed ...

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Abstract

The invention provides a preparation method and a growth device of an N-type silicon carbide crystal. The method comprises the following steps: (1) placing a raw material in a high-temperature area of a crucible, placing a seed crystal in a low-temperature area of the crucible, recessing the outer wall of the top of the crucible inwards to form an annular gas groove, placing the assembled crucible in a furnace body of a crystal growth furnace, and enabling the annular air groove to be close to a vent hole of the furnace body; and (2) in a crystal growth stage, introducing nitrogen source gas into the furnace body through the vent hole, controlling crystal growth temperature and crystal growth pressure, and enabling the N-type silicon carbide crystal to grow on the seed crystal. The annular gas groove is close to the vent hole of the furnace body, the introduced gas can flow along the annular gas groove, a gas flow speed is high, the gas is diffused into the crucible, heat transmission away from the central axis in the crucible is accelerated, the radial temperature gradient of the crucible is reduced, and crystal growth quality is improved.

Description

technical field [0001] The invention relates to a preparation method and a growth device of an N-type silicon carbide crystal, belonging to the technical field of semiconductor material preparation. Background technique [0002] Silicon carbide materials have attracted extensive attention due to their excellent semi-insulating properties, especially for high-power semiconductor devices with special needs. Silicon carbide has become a potential material for these devices due to its high temperature, high frequency, and high power characteristics. . [0003] At present, the industrial production of silicon carbide crystals mostly adopts the PVT method for production, but due to the high requirements for its growth conditions, the defects introduced during the growth process limit its performance improvement and further application and development. Therefore, the improvement of defects has become the primary prerequisite for improving the quality of silicon carbide substrates....

Claims

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Application Information

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IPC IPC(8): C30B29/36C30B23/00
CPCC30B29/36C30B23/002
Inventor 张九阳方帅高宇晗李霞赵树春高超
Owner SICC CO LTD
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