Unlock instant, AI-driven research and patent intelligence for your innovation.

Wafer processing method

A processing method and chip technology, applied in metal processing, metal processing equipment, film/sheet adhesive, etc., can solve the problem of device chip quality degradation and achieve the effect of reducing load

Pending Publication Date: 2021-05-25
DISCO CORP
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the degradation of the quality of the device chip becomes a problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer processing method
  • Wafer processing method
  • Wafer processing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] An embodiment of one embodiment of the present invention will be described with reference to the drawings. First, a wafer processed by the wafer processing method of this embodiment will be described. figure 1 (A) is a perspective view schematically showing the front of the wafer 1, figure 1 (B) is a perspective view schematically showing the back surface of the wafer 1 .

[0038] The wafer 1 is, for example, a substantially disk-shaped substrate made of materials such as Si (silicon), SiC (silicon carbide), GaN (gallium nitride), GaAs (gallium arsenide), or other semiconductors, or materials such as sapphire, glass, and quartz. Wait. The glass is, for example, alkali glass, non-alkali glass, soda lime glass, lead glass, borosilicate glass, quartz glass, or the like.

[0039] The front surface 1a of the wafer 1 is divided by a plurality of dividing lines 3 arranged in a grid. In addition, devices 5 such as ICs, LSIs, and LEDs are formed in each region demarcated by di...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a wafer processing method, which can form a device chip without reducing quality. The wafer processing method divides a wafer in which a plurality of devices are formed in each region of a front surface divided by a division predetermined line into respective device chips, wherein the wafer processing method comprises the following steps: a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on outer periphery of frame; an integration step of heating the polyester sheet and integrating the wafer and the frame through thermocompression bonding by means of the polyester sheet; a division step of irradiating the wafer with a laser beam having a wavelength that is permeable to the wafer along the division predetermined line, forming a shield tunnel in the wafer, and dividing the wafer into individual device chips; and a pickup step of applying ultrasonic waves to the polyester sheet, jacking up the device chip, and picking up the device chip.

Description

technical field [0001] The present invention relates to a wafer processing method, which divides a wafer with a plurality of devices formed in each area on the front side divided by a dividing line into individual device chips. Background technique [0002] In the manufacturing process of device chips used in electronic equipment such as mobile phones and personal computers, first, a plurality of intersecting dividing lines (streets) are set on the front surface of a wafer made of materials such as semiconductors. Then, devices such as IC (Integrated Circuit: Integrated Circuit), LSI (Large-Scale Integration Circuit: Large-Scale Integrated Circuit), and LED (Light Emitting Diode: Light Emitting Diode) are formed in each area divided by the planned division line. [0003] Then, an adhesive tape called a dicing tape, which is pasted on a ring-shaped frame with an opening so as to seal the opening, is pasted on the back or front of the wafer to form the wafer, the adhesive tape...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/78H01L21/67B23K26/38B23K26/70B23K101/40
CPCH01L21/78H01L21/67132H01L21/67115B23K26/38B23K26/702B23K2101/40H01L21/6836H01L21/68721H01L21/68714H01L21/68742H01L2221/68327C09J7/241C09J2203/326B23K2103/56H01L2221/68336H01L2221/6839B23K26/40B23K26/364
Inventor 原田成规松泽稔木内逸人淀良彰荒川太朗上里昌充河村慧美子藤井祐介宫井俊辉大前卷子
Owner DISCO CORP