Porous silicon carbide ceramic membrane and preparation method thereof
A porous silicon carbide and ceramic membrane technology, applied in the field of inorganic ceramic membranes, can solve the problems of serious energy consumption and complex process, and achieve the effects of overall energy consumption reduction, simple preparation process, and environmental friendliness
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Embodiment 1
[0043]According to the parameters of the respective contravents listed in Table 1, the topography of the product silicon carbide was performed with reference to the above reference experiment. According to the content described in Table 1, when the catalyst is not employed, the porous silicon carbide film cannot be formed. When using a catalyst other than iron carbide and iron carbide, it is not suitable for the formation, calcium carbonide and carbon carbon carbon carbon carbon carbon monoformation, calcium carbide. When making a catalyst, there is no catalytic effect, which is formed to be dense silicon carbide, rather than porous silicon carbide; nickel, produced as a catalyst, resulting in too much aperture, which is easily generated. Silicon carbide powder.
[0044]It can be seen that tungsten carbide, iron carbide is a more excellent catalyst, which is easy to control the reaction state, thereby generating a porous silicon carbide film.
[0045]Table 1-1 Catalyst selection
[0046] ...
Embodiment 2
[0052]When tungsten carbide, iron carbide is used as a catalyst, by changing different heating speeds, it is possible to study whether the temperature rise rate has a large impact on the aperture, according to the plurality of contrast of the plurality of contrasts provided, the heating speed is apertured by the porous silicon carbide. The effect is large, the faster the temperature rise rate, the greater the aperture. If the heating speed is too high, it is prone to excessive aperture that causes the silicon carbide film to break into a powder, and if the heating speed is too slow, it is easy to cause poor aperture effect, and the generated silicon carbide is relatively dense, and the specific surface area is relatively low. What have the problem occurs.
[0053]Impact of Table 2 Heating speed on the effect of pore effect
[0054]
[0055]
Embodiment 3
[0057]As shown in Table 3, the study found that when a certain dimension of the silicon source particles is less than 800 nm, the growth of porous silicon carbide can be promoted. The main reason is that the melting point is lowered, so that the liquid silicon movement is faster, so that the reaction rate Faster at the same temperature. Preferably, in order to make the silicon source particles can be more preferred in the carbon film surface to increase the uniformity of the porous silicon carbide film, the dispersion liquid containing the silicon source can be added or sprayed into the surface of the carbon film.
[0058]Table 3 Effect of Silicon Source Size on Hole Effect
[0059]
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