Check patentability & draft patents in minutes with Patsnap Eureka AI!

High-entropy oxide film and preparation method and application thereof

An oxide thin film, high-entropy technology, applied in chemical instruments and methods, catalyst activation/preparation, metal/metal oxide/metal hydroxide catalysts, etc., can solve problems such as limiting the application range of electronic devices, and achieve low cost , film performance is stable, and the operation process is simple

Active Publication Date: 2021-06-04
南宁师范大学
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, so far, even though high-entropy oxides have a large amount of ferromagnetic elements, they have no ferromagnetism or very weak ferromagnetism at room temperature (such as Chinese patent CN111118464A), which limits their application range in electronic devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-entropy oxide film and preparation method and application thereof
  • High-entropy oxide film and preparation method and application thereof
  • High-entropy oxide film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0033] The present invention provides a kind of preparation method of high entropy oxide thin film, it is characterized in that, comprises the following steps:

[0034] Cutting the Co metal sheet, the Ni metal sheet, the Cu metal sheet and the Zn metal sheet respectively to obtain a Co fan-shaped metal sheet, a Ni fan-shaped metal sheet, a Cu fan-shaped metal sheet and a Zn fan-shaped metal sheet;

[0035] Assemble the Co fan-shaped metal sheet, Ni fan-shaped metal sheet, Cu fan-shaped metal sheet and Zn fan-shaped metal sheet into a cylindrical target to obtain a multi-metal mixed target;

[0036] Under vacuum conditions, the multi-metal mixed target is used as a target material, and the silicon substrate is subjected to radio frequency magnetron sputtering to obtain the high-entropy oxide thin film.

[0037] In the present invention, unless otherwise specified, the raw materials used are commercially available products in the art.

[0038] In the present invention, Co metal...

Embodiment 1

[0066] Step S1: firstly take a metal plate (Co, Ni, Cu, Zn) with a purity higher than 99.90%, and use a wire cutting machine to cut the plate into a sector with a diameter of 60mm, a thickness of 5mm, and different radians. The area percentage of the sector is as follows: 15% Zn fan-shaped metal sheet, 25% Cu fan-shaped metal sheet, 30% Co fan-shaped metal sheet, 30% Ni fan-shaped metal sheet;

[0067] Step S2: Ultrasonic cleaning each fan-shaped metal sheet with alcohol, acetone, and deionized water for 5 minutes respectively; assemble each fan-shaped metal sheet into a cylindrical target, and fix it on the target base with a fixture to obtain a multi-metal mixed target;

[0068] Step S3: ultrasonically cleaning the monocrystalline silicon (100) base material with alcohol, acetone, and deionized water for 5 minutes in sequence;

[0069] Step S4: Load the cleaned monocrystalline silicon (100) base material in the radio frequency magnetron sputtering vacuum chamber, close the ...

Embodiment 2

[0084] Same as Example 1, the only difference is that the sputtering time is 3h again, the thickness of the obtained high-entropy oxide film is 1.2μm, the grain size is 10-20nm, and the saturation magnetization at room temperature is 120emu / cm 3 , The coercive force is 18Oe.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a high-entropy oxide film and a preparation method thereof, and belongs to the technical field of magnetic films. The method comprises the following steps: respectively cutting a Co metal plate, a Ni metal plate, a Cu metal plate and a Zn metal plate to obtain a Co fan-shaped metal sheet, a Ni fan-shaped metal sheet, a Cu fan-shaped metal sheet and a Zn fan-shaped metal sheet; splicing the Co fan-shaped metal sheet, the Ni fan-shaped metal sheet, the Cu fan-shaped metal sheet and the Zn fan-shaped metal sheet into a cylindrical target material, and obtaining a multi-metal mixed target; and under the vacuum condition, performing radio frequency magnetron sputtering on a monocrystalline silicon substrate by taking the multi-metal mixed target as a target material, and obtaining the high-entropy oxide film. The high-entropy oxide film prepared by the method has ferromagnetism at room temperature, is a single rock salt structure film simultaneously containing four cations of Co, Ni, Cu and Zn, has relatively high saturation magnetization and relatively small coercive force at normal temperature, and has typical soft magnetic material characteristics.

Description

technical field [0001] The invention relates to the technical field of magnetic thin films, in particular to a high-entropy oxide thin film and its preparation method and application. Background technique [0002] Ferrite magnetic film is a composite oxide magnetic film composed of iron group elements and one or more other metal elements. Compared with metal and alloy magnetic films, ferrite materials have higher resistivity and can suppress the skin effect at high frequencies. They are suitable for high-frequency and ultra-high-frequency alternating magnetic fields and are indispensable in the field of microwave communications. s material. Especially the soft ferrite thin film, because of its large saturation magnetization and small coercive force, is widely used in small electronic devices such as microwave and millimeter wave devices, magnetization effect devices, film magnetic recording media, magnetic sensors, and thin film transformers. Devices have broad application...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35C23C14/08B01J23/80B01J37/34H01M4/131H01M10/0525
CPCC23C14/35C23C14/3407C23C14/08C23C14/0036B01J23/80B01J37/342H01M4/131H01M10/0525H01M2004/028B01J35/23B01J35/39Y02E60/10
Inventor 孙森王长安米玲仁江伟劳秀敏劳远侠刘乐平李媛媛姚华
Owner 南宁师范大学
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More