High-entropy oxide film and preparation method and application thereof
An oxide thin film, high-entropy technology, applied in chemical instruments and methods, catalyst activation/preparation, metal/metal oxide/metal hydroxide catalysts, etc., can solve problems such as limiting the application range of electronic devices, and achieve low cost , film performance is stable, and the operation process is simple
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0033] The present invention provides a kind of preparation method of high entropy oxide thin film, it is characterized in that, comprises the following steps:
[0034] Cutting the Co metal sheet, the Ni metal sheet, the Cu metal sheet and the Zn metal sheet respectively to obtain a Co fan-shaped metal sheet, a Ni fan-shaped metal sheet, a Cu fan-shaped metal sheet and a Zn fan-shaped metal sheet;
[0035] Assemble the Co fan-shaped metal sheet, Ni fan-shaped metal sheet, Cu fan-shaped metal sheet and Zn fan-shaped metal sheet into a cylindrical target to obtain a multi-metal mixed target;
[0036] Under vacuum conditions, the multi-metal mixed target is used as a target material, and the silicon substrate is subjected to radio frequency magnetron sputtering to obtain the high-entropy oxide thin film.
[0037] In the present invention, unless otherwise specified, the raw materials used are commercially available products in the art.
[0038] In the present invention, Co metal...
Embodiment 1
[0066] Step S1: firstly take a metal plate (Co, Ni, Cu, Zn) with a purity higher than 99.90%, and use a wire cutting machine to cut the plate into a sector with a diameter of 60mm, a thickness of 5mm, and different radians. The area percentage of the sector is as follows: 15% Zn fan-shaped metal sheet, 25% Cu fan-shaped metal sheet, 30% Co fan-shaped metal sheet, 30% Ni fan-shaped metal sheet;
[0067] Step S2: Ultrasonic cleaning each fan-shaped metal sheet with alcohol, acetone, and deionized water for 5 minutes respectively; assemble each fan-shaped metal sheet into a cylindrical target, and fix it on the target base with a fixture to obtain a multi-metal mixed target;
[0068] Step S3: ultrasonically cleaning the monocrystalline silicon (100) base material with alcohol, acetone, and deionized water for 5 minutes in sequence;
[0069] Step S4: Load the cleaned monocrystalline silicon (100) base material in the radio frequency magnetron sputtering vacuum chamber, close the ...
Embodiment 2
[0084] Same as Example 1, the only difference is that the sputtering time is 3h again, the thickness of the obtained high-entropy oxide film is 1.2μm, the grain size is 10-20nm, and the saturation magnetization at room temperature is 120emu / cm 3 , The coercive force is 18Oe.
PUM
| Property | Measurement | Unit |
|---|---|---|
| Diameter | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More - R&D
- Intellectual Property
- Life Sciences
- Materials
- Tech Scout
- Unparalleled Data Quality
- Higher Quality Content
- 60% Fewer Hallucinations
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com



