A kind of copper film catalyst for cvd growth graphene and its application

A graphene film, graphene technology, applied in the direction of graphene, physical/chemical process catalyst, metal/metal oxide/metal hydroxide catalyst, etc., can solve the problem of low uniformity and crystallization performance, affecting graphene performance, etc. problem, to achieve the effect of high crystallinity, simple and easy preparation process, and easy to promote large-scale industrialization

Active Publication Date: 2022-08-09
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although Patent 1 (Chinese Publication No. CN106756870A) discloses a method for growing graphene by plasma-enhanced chemical vapor deposition without transfer, the graphene material prepared by it mainly exists in the form of few layers, and its uniformity and crystallinity are relatively low. ; It can be seen from the obtained SEM image that the prepared graphene material mainly exists in an "island-like" structure, with obvious wrinkles and cracks, which seriously affect the performance of graphene

Method used

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  • A kind of copper film catalyst for cvd growth graphene and its application
  • A kind of copper film catalyst for cvd growth graphene and its application
  • A kind of copper film catalyst for cvd growth graphene and its application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] The quartz pieces were sonicated with acetone, anhydrous ethanol, and deionized water for 15 minutes each, and then with CF 4 Plasma surface treatment is performed on the quartz plate. First, the quartz plate is placed in a plasma treatment instrument (frequency is 13.56MHz), CF 4 The purity is 99.9%, the background vacuum is 1.0Pa, the power is 150W, and the time is 15min. 2 protection for 5min;

[0043] The quartz wafer is coated by sputtering coating method; the steps and parameters of the sputtering coating method include: placing the pretreated quartz wafer into a magnetron sputtering chamber, and the background vacuum is 7×10 -5 Pa, sputtering power 100W, sputtering pressure 0.1Pa, Ar100sccm, and sputtering time 10min. The thickness of the copper film in the obtained copper film catalyst is 50 nm;

[0044] Then the obtained copper film catalyst was put into the chemical vapor deposition equipment, filled with Ar=200sccm; then the temperature was raised, and whe...

Embodiment 2

[0046] The quartz pieces were sonicated with acetone, anhydrous ethanol, and deionized water for 15 minutes each, and then with CF 4 Plasma surface treatment is performed on the quartz plate. First, the quartz plate is placed in a plasma treatment instrument (frequency is 13.56MHz), CF 4 The purity is 99.9%, the background vacuum is 1.0Pa, the power is 150W, and the time is 15min. 2 protection for 5min;

[0047] The copper film is coated on the quartz sheet by the method of thermal evaporation coating; the steps and parameters of the thermal evaporation include: putting the quartz sheet into a vacuum coating machine, closing each valve for vacuum treatment, the purity of the copper sheet is 99.999%, and the vacuum degree is greater than 1×10 -3 Pa, the substrate temperature is 250°C; the thickness of the copper film in the obtained copper film catalyst is 50 nm;

[0048] Then put the copper film catalyst into the chemical vapor deposition equipment, and fill it with Ar=200s...

Embodiment 3

[0051] The quartz pieces were sonicated with acetone, anhydrous ethanol, and deionized water for 15 minutes each, and then with CF 4 Plasma surface treatment is performed on the quartz plate. First, the quartz plate is placed in a plasma treatment instrument (frequency is 13.56MHz), CF 4 The purity is 99.9%, the background vacuum is 3.0Pa, the power is 150W, and the time is 15min. 2 protection for 5min;

[0052] The quartz wafer is coated by sputtering coating method; the steps and parameters of the sputtering coating method include: placing the pretreated quartz wafer into a magnetron sputtering chamber, and the background vacuum is 7×10 -5 Pa, sputtering power 100W, sputtering pressure 0.1Pa, Ar100sccm, sputtering time 20min;

[0053] The thickness of the copper film in the copper film catalyst in Example 3 was 100 nm. The obtained copper membrane catalyst was used for in-situ growth of graphene, and the preparation process was the same as that in Example 1.

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Abstract

The invention relates to a copper film catalyst for CVD growth of graphene and its application. The copper film catalyst comprises: a quartz plate with a surface hydrophobic treatment as a base material, and a copper film formed on the surface of the base material.

Description

technical field [0001] The invention relates to a copper film catalyst for CVD growth graphene and its application, in particular to a method for in-situ growth of graphene films on quartz sheets by utilizing physical coating and chemical vapor deposition (CVD) technology, and belongs to the field of graphene preparation . Background technique [0002] The CVD method can effectively control the structure and number of layers of graphene on the surface of a specific catalyst substrate by designing and controlling the decomposition of the carbon source and the deposition of carbon atoms in a high temperature and low pressure environment. Low carbon solubility and thermal conductivity similar to graphene materials have become one of the most common catalyst materials in the graphene preparation process by CVD. [0003] However, in the subsequent transfer process of CVD-grown graphene, contaminants will inevitably be introduced, resulting in wrinkles and cracks, which will seri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/72B01J35/02C01B32/186
CPCB01J23/72B01J35/023C01B32/186
Inventor 于云孙付通冯爱虎陈兵兵于洋米乐宋力昕
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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