Micro-display driving chip structure and manufacturing process thereof

Abstract

The invention discloses a micro-display driving chip structure and a manufacturing process thereof, and belongs to the technical field of micro-display driving chips, the micro-display driving chip structure comprises a semiconductor substrate, an MOSFET module and a polycrystalline silicon thin film transistor module, the MOSFET module and the polycrystalline silicon thin film transistor module are arranged on the semiconductor substrate, a monocrystalline silicon active area is arranged on the semiconductor substrate, the MOSFET module is arranged on the monocrystalline silicon active area, two sides of the monocrystalline silicon active region are respectively provided with shallow trench isolation structures, a polycrystalline silicon active region is arranged above one shallow trench isolation structure, and the polycrystalline silicon thin film transistor module is arranged on the polycrystalline silicon active area. The beneficial effects are that the polycrystalline silicon thin film transistor module is introduced into the MOSFET, the combined driving chip is prepared, the process is simple, the driving capability is strong, the problem of abnormal display caused by large leakage current can be avoided, and heat and power consumption can be reduced.

Description

technical field [0001] The invention relates to the technical field of micro-display driving chips, in particular to a micro-display driving chip structure and a manufacturing process thereof. Background technique [0002] Currently based on silicon-based MOSFET (metal-oxide semiconductor field-effect transistor) display technology, with the help of single crystal silicon high carrier mobility (1350cm 2 / Vs), has achieved ultra-high resolution, including silicon-based organic light-emitting diodes (silicon-based OLED), liquid crystal on silicon (LCOS), Micro LED, digital light processing (DLP), etc., are using silicon-based CMOS driver chips . Compared with traditional transistors, MOSFET uses single crystal silicon as the channel, and the carrier mobility is high. Although the driving ability is strong, the MOSFET leakage current (Ioff) is large. The MOSFET leakage current is generally at the pA level, and the display generally requires a leakage current of the fA level. ...

AI Technical Summary

Problems solved by technology

Compared with traditional transistors, MOSFET uses single crystal silicon as the channel, and the carrier mobility is high. Although the driving ability is strong, the MOSFET leakage current (Ioff) is large.

The MOSFET leakage current is generally at the pA level, and the display generally requires a leakage current of the fA level. A large leakage current will cause abnormal display such as bright or dark pixels. Mobile Portable Application

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