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Light emitting diode epitaxial wafer and growth method thereof

A technology for light emitting diodes and a growth method, applied in the field of light emitting diode epitaxial wafers and their growth, can solve the problems of affecting the incorporation of multiple quantum well layers, affecting the wavelength consistency of epitaxial wafers, reducing the luminous efficiency of light emitting diodes, and the like, so as to ensure consistent wavelengths performance, ensure normal work, and improve the effect of luminous efficiency

Active Publication Date: 2021-06-22
HC SEMITEK SUZHOU
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Due to the difference in lattice constant between substrate (silicon carbide, sapphire, silicon wafer, etc.) The incorporation of In will affect the wavelength uniformity of the epitaxial wafer and reduce the luminous efficiency of the light-emitting diode.

Method used

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  • Light emitting diode epitaxial wafer and growth method thereof
  • Light emitting diode epitaxial wafer and growth method thereof
  • Light emitting diode epitaxial wafer and growth method thereof

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Embodiment Construction

[0037] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.

[0038] figure 1 is a schematic structural view of a light-emitting diode epitaxial wafer provided by an embodiment of the present disclosure, as shown in figure 1 As shown, the light-emitting diode epitaxial wafer includes a substrate 1 , and a gallium nitride buffer layer 2 , an N-type semiconductor layer 3 , a multi-quantum well layer 4 and a P-type semiconductor layer 5 stacked on the substrate 1 in sequence.

[0039] The multiple quantum well layer 4 is prepared by molecular beam epitaxy. The light-emitting diode epitaxial wafer also includes SiO disposed between the N-type semiconductor layer 3 and the multi-quantum well layer 4 2 Thin film layer6. MQW layer 4 imprinted on SiO 2 On the thin film layer 6, and part of the mu...

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Abstract

The invention provides a light emitting diode epitaxial wafer and a growth method thereof, and belongs to the technical field of semiconductors. The light emitting diode epitaxial wafer comprises a substrate, a gallium nitride buffer layer, an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer, wherein the gallium nitride buffer layer, the N-type semiconductor layer, the multi-quantum well layer and the P-type semiconductor layer are sequentially stacked on the substrate. The multi-quantum well layer is prepared by adopting a molecular beam epitaxy method, and the light-emitting diode epitaxial wafer further comprises a SiO2 thin film layer arranged between the N-type semiconductor layer and the multi-quantum well layer, wherein the multi-quantum well layer is imprinted on the SiO2 thin film layer, and a part of the multi-quantum well layer penetrates through the SiO2 thin film layer to be in contact with the N-type semiconductor layer. According to the epitaxial wafer, the wavelength consistency of the epitaxial wafer can be ensured, and the luminous efficiency of a light-emitting diode is ensured.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a growth method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, LED is a new generation of light source with broad prospects, and is being rapidly and widely used in traffic lights, car interior and exterior lights, urban landscape lighting, indoor and outdoor display screens and small-pitch displays. screen and other fields. [0003] The epitaxial wafer is the main component of the LED. The existing GaN-based LED epitaxial wafer includes a substrate and a buffer layer stacked on the substrate in sequence, an undoped GaN layer, an N-type layer, a multi-quantum well layer and a P-type layer. Floor. The N-type l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/00
CPCH01L33/06H01L33/0062
Inventor 王群郭炳磊葛永晖董彬忠李鹏
Owner HC SEMITEK SUZHOU
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