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Preparation method of two-dimensional semiconductor material SnSe2 single crystal

A two-dimensional semiconductor and single crystal technology, applied in the field of two-dimensional materials, can solve the problems of unobtainable, limited development, high quality, etc., and achieve the effect of simple equipment, simple and easy preparation process, and improved preparation efficiency

Active Publication Date: 2021-06-25
NANJING UNIV OF TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

The preparation of SnSe reported today 2 Single crystal method, due to the presence of inappropriate precursors or mixed products after the reaction, the product has defects, so that large-area, high-quality 2D intrinsic SnSe cannot be obtained 2 Single crystal, which further limits its development in the field of optoelectronic devices

Method used

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  • Preparation method of two-dimensional semiconductor material SnSe2 single crystal
  • Preparation method of two-dimensional semiconductor material SnSe2 single crystal
  • Preparation method of two-dimensional semiconductor material SnSe2 single crystal

Examples

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Effect test

Embodiment 1

[0031] A method of chemical vapor transport (CVT) based on the preparation of sheet-like easy-to-exfoliate two-dimensional SnSe 2 Single crystal method, the steps are as follows:

[0032] Step (1), according to the molar ratio of Se powder and Sn powder is 2:1, weigh elemental selenium powder and elemental tin powder, the total mass is 1g; according to the stickiness on weighing paper, put Sn powder and Se powder into Mortar, grind in the mortar for 10-15min until the color is uniform gray-black; through the paper cylinder channel, transfer the uniformly mixed powder sample to the quartz tube (quartz tube size: length 300mm, inner diameter 25mm, seal The closed end (100mm away from the quartz nozzle) (can be called the source area);

[0033] Add an appropriate amount of iodine particles into the quartz tube as a transfer agent. Generally, the amount of iodine used in 1g of sample is 50 mg. Also, iodine particles are placed in the closed end of the quartz tube. Since iodine is...

Embodiment 2

[0041] Referring to the method of Example 1, only adjust step (2) The temperature difference between the high temperature zone and the low temperature zone in the growth stage and cooling stage is maintained at 20°C, and the temperature in the low temperature zone is kept at 550°C. This embodiment can also make SnSe 2 single crystal (see Figure 5 ).

[0042] With the SnSe that embodiment 1 makes 2 Compared with single crystal, the present example SnSe 2 The area of ​​the single crystal is relatively small, and the surface is not as good as that of the SnSe prepared in Example 1. 2 Single crystal flat.

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Abstract

The invention discloses a preparation method of a two-dimensional semiconductor material SnSe2 single crystal, which comprises the following steps: uniformly mixing Se powder and Sn powder, putting the mixture into a quartz tube, putting elemental iodine into the quartz tube, pumping air pressure in the quartz tube to be less than or equal to 0.1 mbar, and sealing the tube; putting the quartz tube into a double-temperature-zone tubular furnace, putting one end filled with the raw materials into a high-temperature zone, putting the other end of the quartz tube into a low-temperature zone, setting the temperature of the double-temperature zone to be 560-600 DEG C, and keeping the temperature constant for 1 day; the reducing the temperature of the low-temperature area to 550 DEG C, keeping the temperature of the high-temperature area at 560-600 DEG C, and keeping the state for 5-7 days; and conducting cooling to room temperature, and keeping the temperature difference between the high-temperature area and the low-temperature area at 10-50 DEG C in the cooling process to obtain the flaky large-area high-quality SnSe2 single crystal. According to the method, the SnSe2 single crystal can be prepared in one step, the single crystal is bright black, is in a thin sheet shape, is uniform in component, smooth in surface and easy to mechanically peel off, and is beneficial to micromachining processes such as photoetching and the like on a material.

Description

technical field [0001] The invention belongs to the field of two-dimensional materials, and relates to a two-dimensional semiconductor material SnSe 2 A method for preparing a single crystal, in particular to a method for preparing a large-area, high-quality two-dimensional intrinsic SnSe 2 single crystal method. Background technique [0002] Since Geim and Novoselov first reported the successful preparation of graphene by scotch tape peeling method in 2004, people have been working hard to find two-dimensional materials, and a huge family of two-dimensional materials has been formed. Graphene has rich and peculiar physical properties, and it has unique carrier characteristics and excellent electrical properties. The carriers in graphene are Dirac-fermions with ultrahigh carrier mobility. However, perfect graphene is a zero-bandgap semiconductor, which hinders the application of graphene in semiconductor devices. Novel two-dimensional materials—two-dimensional semiconduc...

Claims

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Application Information

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IPC IPC(8): C30B25/00C30B29/46C30B29/64
CPCC30B25/00C30B29/46C30B29/64
Inventor 胡小会陈旭凡
Owner NANJING UNIV OF TECH
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