Flexible organic light-emitting device, preparation method thereof and display device
An organic light-emitting device, flexible technology, applied in the direction of organic semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of reducing device efficiency, difficulty in light extraction, etc., to eliminate total reflection, increase light extraction rate, improve The effect of efficiency
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Embodiment 1
[0050] as attached figure 1 As shown, this embodiment provides a flexible organic light-emitting device, and its specific preparation method includes the following steps:
[0051] S1. Use transparent glass with ITO on the surface as the substrate, then ultrasonically clean it with deionized water, acetone, and ethanol for 15 minutes, and then treat it in a plasma cleaner for 2 minutes to obtain the first electrode 1 .
[0052] S2 , on the washed first electrode 1 , prepare a hole injection material HIL1 by vacuum evaporation, with a thickness of 10 nm, as the hole injection layer 2 .
[0053] S3. On the hole injection layer 2, a hole transport material HTL1 is prepared by vacuum evaporation, with a thickness of 125 nm, as the hole transport layer 3 .
[0054] S4. On the hole transport layer 3, an electron blocking material EBL1 is prepared by vacuum evaporation with a thickness of 5 nm as the electron blocking layer 4.
[0055] S5. On the electron blocking layer 4, the host ...
Embodiment 2
[0061] as attached figure 1 As shown, this embodiment provides a flexible organic light-emitting device, and its specific preparation method includes the following steps:
[0062] S1. Use transparent glass with ITO on the surface as the substrate, then ultrasonically clean it with deionized water, acetone, and ethanol for 15 minutes, and then treat it in a plasma cleaner for 2 minutes to obtain the first electrode 1 .
[0063] S2 , on the washed first electrode 1 , prepare a hole injection material HIL1 by vacuum evaporation, with a thickness of 10 nm, as the hole injection layer 2 .
[0064] S3. On the hole injection layer 2, a hole transport material HTL1 is prepared by vacuum evaporation, with a thickness of 125 nm, as the hole transport layer 3 .
[0065] S4. On the hole transport layer 3, an electron blocking material EBL1 is prepared by vacuum evaporation with a thickness of 5 nm as the electron blocking layer 4.
[0066] S5. On the electron blocking layer 4, the host ...
Embodiment 3
[0072] as attached figure 1 As shown, this embodiment provides a flexible organic light-emitting device, and its specific preparation method includes the following steps:
[0073] S1. Use transparent glass with ITO on the surface as the substrate, then ultrasonically clean it with deionized water, acetone, and ethanol for 15 minutes, and then treat it in a plasma cleaner for 2 minutes to obtain the first electrode 1 .
[0074] S2 , on the washed first electrode 1 , prepare a hole injection material HIL1 by vacuum evaporation, with a thickness of 10 nm, as the hole injection layer 2 .
[0075] S3. On the hole injection layer 2, a hole transport material HTL1 is prepared by vacuum evaporation, with a thickness of 125 nm, as the hole transport layer 3 .
[0076] S4. On the hole transport layer 3, an electron blocking material EBL1 is prepared by vacuum evaporation with a thickness of 5 nm as the electron blocking layer 4.
[0077] S5. On the electron blocking layer 4, the host ...
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