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Method for polishing silicon wafer

A grinding method and technology for silicon wafers, which are used in grinding machine tools, grinding devices, manufacturing tools, etc.

Pending Publication Date: 2021-06-29
GLOBALWAFERS JAPAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] As a result, metal impurities are precipitated from the holding ring 40 (guide 41 ) during polishing of the silicon wafer W, which may cause defects on the front surface of the silicon wafer W.

Method used

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  • Method for polishing silicon wafer
  • Method for polishing silicon wafer
  • Method for polishing silicon wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] In Example 1, according to image 3 In the shown flow, a single-side mirror polishing process is performed on a silicon wafer having a diameter of 300 mm.

[0046] The material of the retaining ring 3 is glass epoxy resin, and the washing of the retaining ring is, as an alkali wash, in SC1 (NH 4 OH: 1wt%, H 2 O 2 : 1 wt% mixed solution) immersed for 30 minutes, and then rinsed with pure water. In addition, as pickling, it was immersed in HF (1 wt %) for 30 minutes, pickled, and then rinsed with pure water.

[0047] The number of particles on the front side of the polished silicon wafer was measured with a laser scattering particle counter (Surfscan SP-3 manufactured by KLA-Tencor).

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Abstract

The purpose of the present invention is to reduce wafer surface defects caused by metal impurities deposited from the surface and the surface portion of a retaining ring in a silicon wafer polishing step using the retaining ring. In this method for polishing a silicon wafer, a silicon wafer (W) is held by a polishing head (1) in a state of being surrounded by a holding ring (3), and the silicon wafer held by the polishing head is rotated while being pressed against polishing cloth (5) affixed to a polishing stage (4), and the front surface of the silicon wafer is polished. The method includes a step of washing the retaining ring with at least one of an alkaline solution and an acidic solution, and a step of polishing the silicon wafer after the step of washing the retaining ring.

Description

technical field [0001] The present invention relates to a method for polishing a silicon wafer, and more particularly, to a method for polishing a silicon wafer that is ground using a retainer ring held around the silicon wafer when polishing a silicon wafer cut from single crystal silicon. Background technique [0002] Conventionally, as a method of manufacturing a silicon wafer having a mirror surface on one side, it is generally based on Figure 5 process shown. That is, a step of slicing a cylindrical silicon single crystal wafer (step S1), a step of polishing or grinding both sides of the sliced ​​wafer (step S2), and removing a strained layer generated by the processing And the process of etching (step S3), the process of sticking the etched wafer to the grinding head of the single-sided single-wafer grinding device by means of wafer holders such as wax (step S4), using the single-sided single-wafer grinding device from the wafer The primary polishing of the front sur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/10B24B37/32H01L21/304
CPCB24B37/107B24B37/32H01L21/304
Inventor 平泽学冈部和树坂井伸青木龙彦
Owner GLOBALWAFERS JAPAN
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