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Metal oxide transparent conductive film and application thereof

A transparent conductive film and oxide technology, applied in the direction of oxide conductors, non-metallic conductors, conductive layers on insulating carriers, etc., can solve the problem of large absorption of ITO films, and achieve improved transmittance, good mobility characteristics, The effect of increasing the mobility

Pending Publication Date: 2021-07-02
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The surface plasmon effect caused by too high carrier concentration causes the ITO film to absorb more in the infrared band

Method used

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  • Metal oxide transparent conductive film and application thereof
  • Metal oxide transparent conductive film and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Example 1: Cerium oxide doped indium tin oxide transparent conductive film

[0025] A group of metal oxides transparent conductive films, the group metal oxide transparent conductive film material is: in indium tin oxide (ITO), cerium oxide as a charge conversion center, forming cerium oxide doped indium tin zinc (CE: ITO) Transparent conductive material. The metal oxide transparent conductive film was prepared by a solution method.

[0026] Among them, for oxide matching formulas (INO 1.5 ) x (Mo) y (REO) z , Mo is SNO 2 , REO oxide as CEO 2 . Composed of oxides (INO 1.5 ) x (SNO 2 ) y (Ceo 2 ) z The medium x = 0.97270, y = 0.0264, z = 0.0009. However, not limited to the above ratio, in other embodiments, x = 0.96000, y = 0.03908, z = 0.00092, or x = 0.900, y = 0.095, z = 0.0050, or x = 0.9200, y = 0.07999, Z = 0.00001, will not be described here.

[0027] The carrier mobility of the metal oxide transparent conductive film is 123cm 2 / VS, carrier concentration is 9.1 × 1...

Embodiment 2

[0028] Example 2: Oxide doped indium oxide and oxide transparent conductive film

[0029]A group of metal oxide transparent conductive films, the metal oxide transparent conductive film material is: forming oxidized oxide as a charge conversion center in indium titanium oxide (ITIO), forming oxide doped indium oxide (YB: ITIO) Transparent conductive material. The group metal oxide transparent conductive film was prepared by magnetron sputtering.

[0030] Among them, for oxide matching formulas (INO 1.5 ) x (Mo) y (REO) z , Mo is Tio 2 , REO oxide YB 2 O 3 . Composed of oxides (INO 1.5 ) x (Tio 2 ) y (Ybo) 1.5 ) z The medium x = 0.97943, y = 0.01959, z = 0.00098. However, is not limited to the above ratio, in other embodiments, x = 0.98000, y = 0.01950, z = 0.00050, or, x = 0.99000, y = 0.00500, z = 0.00500, or x = 0.9200, y = 0.07999, Z = 0.00001, will not be described here.

[0031] The carrier mobility of the metal oxide transparent conductive film is 186cm 2 / VS, carrier conc...

Embodiment 3

[0032] Example 3: Toxide doped indium zirconium transparent conductive film

[0033] A group of metal oxide transparent conductive films, the metal oxide transparent conductive film material is: in indium zirconium oxide (IzRO), cerium oxide as a charge conversion center, forming oxide doped indium zirconium oxide (EU: IZRO) Transparent conductive material. The group metal oxide transparent conductive film was prepared using an atomic layer deposition method.

[0034] Among them, for oxide matching formulas (INO 1.5 ) x (Mo) y (REO) z , Mo is Zro 2 , REO oxide for EU 2 O 3 . Composed of oxides (INO 1.5 ) x (Zro 2 ) y (Euo) 1.5 ) z The medium x = 0.93943, y = 0.05959, z = 0.00098. However, not limited to the above ratio, in other embodiments, x = 0.98000, y = 0.01950, z = 0.00050, or x = 0.97000, y = 0.02800, z = 0.00200, or, x = 0.9900, y = 0.00999, Z = 0.00001, will not be described here.

[0035] The carrier mobility of the metal oxide transparent conductive film is 135cm 2 / V...

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Abstract

The invention discloses a metal oxide transparent conductive film, and the film is a transparent conductive material of (In2O3)x(MO)y(ReO)z formed by doping a small amount of rare earth oxide ReO into indium-containing metal oxide MO-In2O3 as a photon-generated carrier conversion center. In the indium-based metal oxide, a rare earth oxide material is introduced, so that the carrier concentration is controlled, and the mobility is improved; rare earth ions in rare earth oxide have lower electronegativity, and an ionic bond Ln-O formed by the rare earth ions and oxygen ions has higher bond breaking energy, so that the oxygen vacancy concentration in the In2O3 film can be effectively controlled. The rare earth ions have the ion radius equivalent to that of indium ions, defect scattering caused by structure mismatch can be reduced, and therefore the good high mobility characteristic can be better kept. The invention also provides an application of the metal oxide transparent conductive film.

Description

Technical field [0001] The present invention relates to the field of coating process, and more particularly to a flat plate display and a metal oxide transparent conductive film (TCO) in the solar cell, and in particular, there is a metal oxide transparent conductive film and its application thereof. Background technique [0002] For existing indium (IN) fundamental oxide transparent conductive film (TCO) systems, indium ions (in 3+ Due to its relatively large ionic radius, it is made larger in the in-IN-IN key track, and its 5S track is a highly efficient carrier transmission channel. The most mature and widely used TCO material is ITO (in 2 O 3 : SNO 2 = 90: 10 wt.%) Film, where IN 3+ Provide efficient conductive channels, SN 4+ The carrier can be supplied as a donor and the distortion of the in-O key can be reduced. However, in the ITO system, due to the low key of the IN-O after indium and oxygen, it is simple indium oxide (in 2 O 3 ) There is a large amount of oxygen space d...

Claims

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Application Information

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IPC IPC(8): H01B1/08H01B5/14H01L21/283
CPCH01B1/08H01B5/14H01L21/283
Inventor 徐苗徐华李民庞佳威陈子楷陶洪邹建华王磊彭俊彪
Owner SOUTH CHINA UNIV OF TECH
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