Blue light-emitting diode with enhanced luminous efficiency by metamaterial and preparation method thereof

A blue-light luminescence and enhanced luminescence technology, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of low radiation enhancement, non-high alignment, narrow working wavelength range, etc., and achieve strong coupling effect and improved internal quantum efficiency. Effect

Active Publication Date: 2022-04-22
SOUTH CHINA NORMAL UNIVERSITY
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Problems solved by technology

[0004] However, not all metals in nature can be used for surface plasmon coupling, which means that it is impossible to achieve a high degree of alignment between the surface plasmon resonance frequency and the emission frequency, resulting in lower radiation enhancement and narrow operating wavelength range

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  • Blue light-emitting diode with enhanced luminous efficiency by metamaterial and preparation method thereof
  • Blue light-emitting diode with enhanced luminous efficiency by metamaterial and preparation method thereof

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Embodiment Construction

[0022] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings of the present invention, and the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, other embodiments obtained by persons of ordinary skill in the art without making creative efforts all belong to the protection scope of the present invention.

[0023] The present invention will be described in further detail below. Such as figure 1 As shown, the present invention relates to a blue light-emitting diode with metamaterial enhanced luminous efficiency, which is sequentially arranged as substrate 1, buffer layer 2, n-type GaN layer 3, multiple quantum well layer 4, metamaterial layer 5 and The p-type layer 6 is provided with a first metal electrode 7 on the surface of the n-type GaN layer 3 , and the second metal elec...

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Abstract

The invention relates to a blue light-emitting diode with enhanced luminous efficiency by metamaterials, which comprises a buffer layer, an n-type GaN layer, a multiple quantum well layer, a metamaterial layer and a p-type layer sequentially stacked on a substrate, wherein the metamaterial layer consists of double The hyperbolic metamaterial unit structure array is composed of a GaN cladding layer, the GaN cladding layer is in contact with the multiple quantum well layer, and the hyperbolic metamaterial unit structure array is formed by stacking Au and Si stacked hyperbolic metamaterial unit structures. Since Au and Si are alternately stacked according to the Thue-Morse sequence to form the unique structure of the quasi-periodic hyperbolic metamaterial, and because the distance between the quasi-periodic hyperbolic metamaterial structure and the quantum well is relatively close, the relationship between surface plasmons and multiple quantum wells The coupling effect between them is strong, thereby realizing the improvement of the internal quantum efficiency of the blue LED.

Description

technical field [0001] The invention relates to the field of light-emitting diode chips, in particular to a blue light-emitting diode with enhanced luminous efficiency by metamaterials and a preparation method thereof. Background technique [0002] As the third-generation lighting source, light-emitting diodes have the advantages of energy saving, environmental protection, fast response speed, long life, small size, etc., and have been widely used in display, traffic signal, automotive lighting, greenhouse lighting, etc. prospect. [0003] Surface plasmon coupling means that when free electrons interact with light, collective oscillations of these electrons occur near the metal surface and cause resonant absorption and light scattering. This collective resonance will only occur at certain electromagnetic field frequencies. Resonance occurs only when the oscillation frequency of the electrons overlaps with the frequency of the light emitted by the excitons. In the resonanc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/02H01L33/00
CPCH01L33/06H01L33/32H01L33/02H01L33/0075
Inventor 郭志友彭麟杰苏哈杨亚峰孙慧卿
Owner SOUTH CHINA NORMAL UNIVERSITY
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