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Double-bond-modified polyhedral oligomeric silsesquioxane and photoresist composition thereof

A technology of silsesquioxane and composition, which is applied in the field of double bond modified cage-type silsesquioxane and its preparation, can solve the problems of large internal stress, restrict development, weaken the adhesion of the system, and achieve high adhesion. The effect of focusing on, solving volume shrinkage and good thermal stability

Inactive Publication Date: 2021-07-09
HANGZHOU INST OF ADVANCED MATERIAL BEIJING UNIV OF CHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Due to the rapid photocuring characteristics of the black matrix photoresist during the photocuring process, the material is cured in a short time, causing serious volume shrinkage problems in the system. The volume shrinkage leads to a large internal stress inside the system, thereby weakening the Adhesion of the system severely limits its development

Method used

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  • Double-bond-modified polyhedral oligomeric silsesquioxane and photoresist composition thereof
  • Double-bond-modified polyhedral oligomeric silsesquioxane and photoresist composition thereof
  • Double-bond-modified polyhedral oligomeric silsesquioxane and photoresist composition thereof

Examples

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Effect test

Embodiment 1

[0049] A preparation method containing double bond modified cage silsesquioxane, comprising the following steps:

[0050] Weigh 1 mol of cage-type silsesquioxane shown in formula I, 3 mol of triethylamine, and 5 mol of xylene solution in a flask, weigh 1.2 mol of acryloyl chloride and add it to a spherical dropping funnel, and place the flask in a water bath Add ice to the water bath, drop acryloyl chloride into the flask at a rate of one drop per second under the ice bath, and stir magnetically; add 500ppm of polymerization inhibitor hydroxyanisole, and stir the reaction for 1h under the ice bath; after the reaction, Then heat up to 20°C and react for 30h; filter the obtained product, then wash with saturated sodium bicarbonate solution for 3 times and separate liquid, water liquid, remove water with anhydrous sodium sulfate, remove solvent by rotary evaporation, and then dry in a vacuum oven at 20°C Drying under the condition for 12 hours, the product containing double bond-...

Embodiment 2

[0056] A preparation method containing double bond modified cage silsesquioxane, comprising the following steps:

[0057] Weigh 1 mol of cage-type silsesquioxane shown in formula II, 5 mol of triethylamine, and 5 mol of xylene solution in a flask, weigh 1.5 mol of acryloyl chloride and add it to a spherical dropping funnel, and place the flask in a water bath Add ice to the water bath, drop acryloyl chloride into the flask at a rate of one drop per second under the ice bath, and stir magnetically; add 1000ppm polymerization inhibitor hydroxyanisole, and stir for 3 hours under the ice bath; after the reaction, Then heat up to 30°C and react for 12 hours; filter the obtained product, then wash with saturated sodium bicarbonate solution for 3 times and separate liquid, water liquid, remove water with anhydrous sodium sulfate, remove solvent by rotary evaporation, and then dry in a vacuum oven at 50°C Drying under the condition for 30 hours, the product containing double bond-modi...

Embodiment 3

[0063] A preparation method containing double bond modified cage silsesquioxane, comprising the following steps:

[0064] Weigh 1 mol of cage-type silsesquioxane shown in formula II, 3 mol of triethylamine, and 5 mol of xylene solution in a flask, weigh 1.5 mol of methacryloyl chloride and add it to a spherical dropping funnel, and place the flask in In the water bath, add ice to the water bath, drop methacryloyl chloride into the flask at a rate of one drop per second under the ice bath, and stir magnetically; add 500ppm of polymerization inhibitor hydroxyanisole, and stir for 2 hours under the ice bath; After the reaction is over, heat up to 25°C for 24 hours; filter the obtained product, then wash with saturated sodium bicarbonate solution for 3 times and separate liquid, water liquid, remove water with anhydrous sodium sulfate, remove solvent by rotary evaporation, and then dry in vacuum Dry in an oven at 40° C. for 24 hours to obtain the double bond-containing modified ca...

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Abstract

The invention discloses double-bond-modified polyhedral oligomeric silsesquioxane used for a black matrix photoresist. The double-bond-modified polyhedral oligomeric silsesquioxane is characterized by containing a reactive double bond and a polyhedral oligomeric silsesquioxane structure. Meanwhile, the invention also discloses a preparation method of the double-bond-modified polyhedral oligomeric silsesquioxane and application of the double-bond-modified polyhedral oligomeric silsesquioxane. The double-bond-modified polyhedral oligomeric silsesquioxane can be used for preparing the black matrix photoresist. The adhesive force of the prepared product is obviously improved, the problem of poor adhesive force caused by volume shrinkage of the black matrix photoresist in the photocuring process can be effectively solved, and the application prospect of the product is wide.

Description

technical field [0001] The invention belongs to the field of photocuring materials, in particular to a double-bond modified cage-type silsesquioxane for improving the adhesion of a black matrix photoresist and a preparation method thereof. Background technique [0002] Color filters are the key components for liquid crystal displays to realize color display. Among them, black matrix photoresist (BM) and color photoresist (RGB) are the most important materials. In the production process of the color filter, the black matrix photoresist and the color photoresist have to go through the processes of pre-baking, exposure, development, and post-baking. The black matrix photoresist is coated first, and then the color photoresist is coated. The color photoresist needs to be built on the black matrix photoresist, so the black matrix photoresist has to go through multiple cleaning and baking processes; and In recent years, black matrix photoresists have a trend of thinner lines, whi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G77/38G03F7/075
CPCC08G77/045G03F7/0757
Inventor 聂俊戚金鑫张硕章宇轩
Owner HANGZHOU INST OF ADVANCED MATERIAL BEIJING UNIV OF CHEM TECH