Germanium sulfide polycrystalline thin film and solar cell comprising same

A technology of solar cells and germanium sulfide, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as difficult preparation, achieve stable performance, easy sublimation, and large application prospects

Active Publication Date: 2021-07-09
INST OF CHEM CHINESE ACAD OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the deficiencies in the prior art, one of the purposes of the present invention is to provide a high-quality germanous sulfide polycrystalline film and its preparation method, the high-quality germanous sulfide polycrystalline film solves the problem that is currently difficult to prepare problem, the germanous sulfide polycrystalline thin film is prepared by adding the pre-deposition of the seed layer in the previous step and the in-situ annealing in the second step (three-step method) on the basis of the traditional near-space rapid sublimation method. The process is simple and coherent , which can be realized by adjusting the switching sequence of nitrogen and gas pumps

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Germanium sulfide polycrystalline thin film and solar cell comprising same
  • Germanium sulfide polycrystalline thin film and solar cell comprising same
  • Germanium sulfide polycrystalline thin film and solar cell comprising same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] A high-quality preparation method of a thin-film solar cell with germanous sulfide polycrystalline thin film as an absorbing layer, the specific steps include: surface selenization of molybdenum base, p-type layer deposition step, n-type layer deposition step, window layer deposition steps and electrode layer deposition steps.

[0052] a) Surface selenization steps of molybdenum substrate: three steps of surface cleaning of blank substrate, magnetron sputtering double-layer Mo substrate and high temperature selenization

[0053] The blank substrate is selected as soda-lime glass, and its surface cleaning process is as follows: use deionized water, acetone, and isopropanol to ultrasonically clean for 40 minutes, then blow it with high-purity nitrogen along a fixed direction, and finally use ultraviolet- Ozone cleaning for 20min.

[0054] A two-step sputtering process was used to prepare the Mo base layer. First, it was sputtered with high pressure (7mTorr) and low power...

Embodiment 2

[0063] A preparation method of a high-quality germanous sulfide polycrystalline thin film solar cell, the specific preparation method is basically the same as that in Example 1, the difference is that:

[0064] In step b), the deposition program of the rapid annealing furnace is: C1:20, T1:15, C2:370, T2:120, C3:370, T3:600, C4:370, T4:6, C5:480, T5: 15, C6: 480, T6: 420, C7: 480, T7: -121 (the unit of C is ℃, the unit of T is second, T=-121 represents the end of the program, that is, the rapid annealing furnace passes through the room temperature Rapidly heat up to 370°C in 15s, keep at this temperature for 120s, and then quickly pass through about 500Torr of N 2 , keep warm for 7 minutes, then turn on the vacuum pump, and after 3 minutes, the pressure in the deposition chamber can be pumped down to below 15mTorr, and then the temperature can be quickly raised to 480°C in 6s, kept for 15 seconds, and finally N 2 , in-situ annealing at 480° C. for 7 minutes), the polycrystallin...

Embodiment 3

[0067] A preparation method of a high-quality germanous sulfide polycrystalline thin film solar cell, the specific preparation method is basically the same as that in Example 1, the difference is that:

[0068] In step b), the deposition program of the rapid annealing furnace is: C1:20, T1:30, C2:410, T2:120, C3:410, T3:600, C4:410, T4:4, C5:480, T5: 15, C6: 480, T6: 420, C7: 480, T7: -121 (the unit of C is ℃, the unit of T is second, T=-121 represents the end of the program, that is, the rapid annealing furnace passes through the room temperature Rapidly heat up to 410°C in 30s, keep at this temperature for 120s, and then quickly pass in about 500Torr of N 2 , keep warm for 7 minutes, then turn on the vacuum pump, and after 3 minutes, the pressure in the deposition chamber can be pumped down to below 15mTorr, and then the temperature can be quickly raised to 480°C in 4s, kept for 15 seconds, and finally N 2 , in-situ annealing at 480° C. for 7 minutes), the polycrystalline g...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
absorption coefficientaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a germanium sulfide polycrystalline thin film and a preparation method thereof, and a solar cell containing the germanium sulfide polycrystalline thin film. The thickness of the germanium sulfide polycrystalline thin film is 400-800nm, the germanium sulfide polycrystalline thin film is prepared by adding seed crystal layer pre-deposition and subsequent in-situ annealing (three-step method) on the basis of a traditional near-space rapid sublimation method, the process is simple and coherent in operation and can be realized by adjusting the switching sequence of nitrogen and an air pump, and a substrate suitable for depositing the germanium sulfide is obtained by utilizing a two-step magnetron sputtering method and high-temperature selenylation. The p-type layer material germanium sulfide (GeS) in the solar cell is a low-price and environment-friendly semiconductor photoelectric material, the band gap is about 1.73 eV, most visible light spectrums are covered, and the light absorption coefficient is up to 105 cm <-1 >, so that the thin-film solar cell formed by adopting the GeS as the absorption layer has a great application prospect.

Description

technical field [0001] The invention belongs to the field of photoelectric materials and thin-film solar cell preparation, and in particular relates to a germanous sulfide polycrystalline film and a solar cell containing the film. Background technique [0002] Ecological pollution and energy shortage are important factors restricting the development of today's economy, and the growing demand for sustainable energy has just become a source of power for the study of low-cost, stable, and high-efficiency solar cells. As we all know, solar cells are an effective and green energy device that converts sunlight into electrical energy. It can help humans efficiently convert and utilize solar energy. Among them, thin-film solar cells are attracting widespread attention because of their excellent performance. Germanium sulfide (GeS) is an inexpensive and environmentally friendly semiconductor optoelectronic material with a band gap of 1.7eV covering most of the visible light spectrum ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/0368H01L31/0445
CPCH01L31/032H01L31/0368H01L31/0445Y02E10/50
Inventor 胡劲松薛丁江冯明杰胡利艳
Owner INST OF CHEM CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap