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A germanium sulfide polycrystalline thin film and solar cell containing the thin film

A germanium sulfide and thin-film technology, which is applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as difficult preparation, achieve stable performance, simple operation, and great application prospects

Active Publication Date: 2022-07-19
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the deficiencies in the prior art, one of the purposes of the present invention is to provide a high-quality germanous sulfide polycrystalline film and its preparation method, the high-quality germanous sulfide polycrystalline film solves the problem that is currently difficult to prepare problem, the germanous sulfide polycrystalline thin film is prepared by adding the pre-deposition of the seed layer in the previous step and the in-situ annealing in the second step (three-step method) on the basis of the traditional near-space rapid sublimation method. The process is simple and coherent , which can be realized by adjusting the switching sequence of nitrogen and gas pumps

Method used

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  • A germanium sulfide polycrystalline thin film and solar cell containing the thin film
  • A germanium sulfide polycrystalline thin film and solar cell containing the thin film
  • A germanium sulfide polycrystalline thin film and solar cell containing the thin film

Examples

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Effect test

Embodiment 1

[0051] A method for preparing a high-quality thin film solar cell with a germanium sulfide polycrystalline film as an absorber layer, the specific steps include: surface selenization of base molybdenum, p-type layer deposition, n-type layer deposition, and window layer deposition steps and electrode layer deposition steps.

[0052] a) Surface Selenization of Molybdenum on the Base

[0053] The blank substrate is selected as soda-lime glass, and its surface cleaning process is as follows: ultrasonically clean with deionized water, acetone, and isopropanol for 40 minutes respectively, and then blow it with high-purity nitrogen along a fixed direction, and finally use ultraviolet- Ozone cleaning for 20min.

[0054] A two-step sputtering process was used to prepare the Mo base layer. First, high pressure (7mTorr) and low power (50W) were used for sputtering for 1200s. Under this condition, the film adhesion was better, but the resistance was higher; then low pressure (3mTorr) Hi...

Embodiment 2

[0063] A preparation method of a high-quality germanium sulfide polycrystalline thin film solar cell, the specific preparation method is basically the same as that in Example 1, the differences are:

[0064] In step b), the deposition procedure of the rapid annealing furnace is: C1:20, T1:15, C2:370, T2:120, C3:370, T3:600, C4:370, T4:6, C5:480, T5: 15, C6: 480, T6: 420, C7: 480, T7: -121 (wherein, the unit of C is °C, the unit of T is seconds, and T=-121 represents the termination of the program, that is, the rapid annealing furnace passes through the room temperature Rapidly heat up to 370°C in 15s, hold at this temperature for 120s, and then rapidly feed N at about 500 Torr 2 , keep the temperature for 7min, then turn on the vacuum pump, after 3min, the pressure in the deposition chamber can be pumped to below 15mTorr, then quickly heat up to 480°C after 6s, keep the temperature for 15 seconds, and finally pass in N with about 500Torr quickly again. 2 , in-situ annealing at ...

Embodiment 3

[0067] A preparation method of a high-quality germanium sulfide polycrystalline thin film solar cell, the specific preparation method is basically the same as that in Example 1, the differences are:

[0068] In step b), the deposition procedure of the rapid annealing furnace is: C1:20, T1:30, C2:410, T2:120, C3:410, T3:600, C4:410, T4:4, C5:480, T5: 15, C6: 480, T6: 420, C7: 480, T7: -121 (wherein, the unit of C is °C, the unit of T is seconds, and T=-121 represents the termination of the program, that is, the rapid annealing furnace passes through the room temperature Rapidly heat up to 410°C in 30s, hold at this temperature for 120s, and then rapidly feed N at about 500 Torr 2 , keep the temperature for 7min, then turn on the vacuum pump, after 3min, the pressure in the deposition chamber can be pumped to below 15mTorr, then it is quickly heated to 480°C after 4s, kept for 15 seconds, and finally the N of about 500Torr is quickly fed again. 2 , in-situ annealing at 480 ° C ...

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Abstract

The invention discloses a germanium sulfide polycrystalline film and a preparation method thereof, and a solar cell containing the germanium sulfide polycrystalline film. The thickness of the germanium sulfide polycrystalline film is 400-800nm, which is obtained by adding seed layer pre-deposition and post-step in-situ annealing (three-step method) on the basis of the traditional near-space rapid sublimation method. The process is simple to operate. And coherence can be realized by adjusting the switching sequence of nitrogen gas and air pump, and a substrate suitable for depositing germanium sulfide is obtained by two-step magnetron sputtering method and high temperature selenization. The p-type layer material germanium sulfide (GeS) in the solar cell is an inexpensive and environmentally friendly semiconductor optoelectronic material with a band gap of about 1.73 eV, covering most of the visible light spectrum, and an absorption coefficient as high as 10 5 cm ‑1 Therefore, the thin-film solar cell composed of it as the absorber layer will have great application prospects.

Description

technical field [0001] The invention belongs to the field of photoelectric material and thin-film solar cell preparation, in particular to a germanium sulfide polycrystalline film and a solar cell containing the film. Background technique [0002] Ecological pollution and energy shortage are important factors restricting today's economic development, and the growing demand for sustainable energy has just become the source of power for the study of low-cost, stable, and high-efficiency solar cells. As we all know, solar cells are an efficient and green energy device that converts sunlight into electrical energy, which can help humans efficiently convert and utilize solar energy. Among them, thin-film solar cells are receiving extensive attention due to their excellent performance. Germanium sulfide (GeS) is an inexpensive and environmentally friendly semiconductor optoelectronic material with a band gap of 1.7 eV, covering most of the visible light spectrum, and an absorption...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/0368H01L31/0445
CPCH01L31/032H01L31/0368H01L31/0445Y02E10/50
Inventor 胡劲松薛丁江冯明杰胡利艳
Owner INST OF CHEM CHINESE ACAD OF SCI
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