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Quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, electric solid-state devices, etc., can solve the problems of low light-emitting efficiency of quantum-dot light-emitting diodes, improve device light-emitting efficiency, increase injection concentration, The effect of increasing the chance of compounding

Active Publication Date: 2021-07-16
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of the above deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem of low luminous efficiency of the existing quantum dot light-emitting diodes

Method used

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  • Quantum dot light-emitting diode and preparation method thereof
  • Quantum dot light-emitting diode and preparation method thereof
  • Quantum dot light-emitting diode and preparation method thereof

Examples

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Effect test

Embodiment 1

[0044] The preparation steps of the quantum dot light-emitting diode are as follows:

[0045] First, the patterned ITO substrate was placed in acetone, washing solution, deionized water, and isopropanol in sequence for ultrasonic cleaning, and each step of ultrasonic cleaning lasted for about 15 minutes. After the ultrasound is completed, place the ITO substrate in a clean oven to dry for later use;

[0046] After the ITO substrate is dried, treat the surface of the ITO substrate with UV-ozone for 5 minutes to further remove the organic matter attached to the surface of the ITO substrate and improve the work function of the ITO substrate;

[0047] Then, deposit a layer of hole injection layer PEDOT:PSS on the ITO substrate processed in the previous step. done in air;

[0048] Next, place the dried substrate coated with the hole injection layer in a nitrogen atmosphere, spin-coat a layer of hole transport layer material TFB, the thickness of this layer is 30nm, and place the ...

Embodiment 2

[0055] The preparation steps of the quantum dot light-emitting diode are as follows:

[0056] First, the patterned ITO substrate is placed in acetone, washing solution, deionized water and isopropanol in sequence for ultrasonic cleaning, and each step of ultrasonic cleaning needs to last for about 15 minutes. After the ultrasound is completed, place the ITO substrate in a clean oven to dry for later use;

[0057] After the ITO substrate is dried, treat the surface of the ITO substrate with UV-ozone for 5 minutes to further remove the organic matter attached to the surface of the ITO substrate and improve the work function of the ITO substrate;

[0058] Then, deposit a layer of hole injection layer PEDOT:PSS on the ITO substrate processed in the previous step. done in air;

[0059] Next, place the dried substrate coated with the hole injection layer in a nitrogen atmosphere, spin-coat a layer of hole transport layer material TFB, the thickness of this layer is 30nm, and place...

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Abstract

The invention discloses a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises an anode, a cathode, a quantum dot light-emitting layer arranged between the anode and the cathode, and a BiVO4 layer arranged between the quantum dot light-emitting layer and the cathode. A layer of BiVO4 is arranged between the quantum dot light-emitting layer and the cathode, the BiVO4 can effectively absorb light emitted to the non-transparent metal electrode and generate photo-induced electrons, and the generated photo-induced electrons are directly injected into the quantum dot light-emitting layer under the action of an external electric field, so that the injection concentration of the electrons is increased; and the recombination probability of electrons and holes in the quantum dot light-emitting layer is improved, so that the light-emitting efficiency of the device is effectively improved.

Description

technical field [0001] The invention relates to the field of quantum dot light emitting devices, in particular to a quantum dot light emitting diode and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of display technology, quantum dot light-emitting diodes (QLEDs) using semiconductor quantum dots (QDs) materials as the light-emitting layer have attracted extensive attention. Quantum dot light-emitting diodes have good characteristics such as high color purity, high luminous efficiency, adjustable luminous color, and stable devices, making them have broad application prospects in flat panel displays, solid-state lighting and other fields. Although the performance of existing QLEDs (including device efficiency and lifetime) has been greatly improved through the improvement of quantum dot materials and the continuous optimization of QLED device structure, its efficiency is still far from the requirements of industrial pro...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/171H10K71/00
Inventor 李龙基刘文勇杨一行
Owner TCL CORPORATION
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