A quantum dot light-emitting diode and its preparation method
A quantum dot light-emitting and diode technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of low luminous efficiency of quantum dot light-emitting diodes, so as to improve the luminous efficiency of devices, increase the injection concentration, and improve The Effect of Compounding Chances
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Embodiment 1
[0044] The fabrication steps of quantum dot light-emitting diodes are as follows:
[0045] First, the patterned ITO substrate was placed in acetone, washing solution, deionized water and isopropanol in sequence for ultrasonic cleaning, and each step of the above ultrasonics lasted about 15 minutes. After the ultrasonic is completed, the ITO substrate is placed in a clean oven to dry for use;
[0046] After the ITO substrate is dried, the surface of the ITO substrate is treated with ultraviolet-ozone for 5 minutes to further remove the organic matter attached to the surface of the ITO substrate and improve the work function of the ITO substrate;
[0047] Then, a hole injection layer PEDOT:PSS was deposited on the ITO substrate processed in the previous step, the thickness of this layer was 30 nm, and the substrate was heated on a heating table at 150 ° C for 30 minutes to remove moisture. done in air;
[0048] Next, the dried substrate coated with the hole injection layer was...
Embodiment 2
[0055] The fabrication steps of quantum dot light-emitting diodes are as follows:
[0056] First, the patterned ITO substrate was placed in acetone, washing solution, deionized water and isopropanol in order for ultrasonic cleaning, and each step of ultrasonics lasted for about 15 minutes. After the ultrasonic is completed, the ITO substrate is placed in a clean oven to dry for use;
[0057] After the ITO substrate is dried, the surface of the ITO substrate is treated with ultraviolet-ozone for 5 minutes to further remove the organic matter attached to the surface of the ITO substrate and improve the work function of the ITO substrate;
[0058] Then, a hole injection layer PEDOT:PSS was deposited on the ITO substrate processed in the previous step, the thickness of this layer was 30 nm, and the substrate was heated on a heating table at 150 ° C for 30 minutes to remove moisture. done in air;
[0059] Next, the dried substrate coated with the hole injection layer was placed i...
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