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Photocatalytic material based on metal-semiconductor composite structure and preparation method and magnetic field auxiliary application of photocatalytic material

A technology of photocatalytic materials and composite structures, applied in chemical instruments and methods, non-metal elements, physical/chemical process catalysts, etc., to achieve efficient photocatalytic water splitting effects, improve performance, and promote separation effects

Active Publication Date: 2021-07-23
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] After searching, there are no relevant reports on the combination of metal materials that generate magnetoelectric potential and semiconductor photocatalysts to obtain catalytic materials with high separation rate of photogenerated carriers and high photocatalytic performance.

Method used

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  • Photocatalytic material based on metal-semiconductor composite structure and preparation method and magnetic field auxiliary application of photocatalytic material
  • Photocatalytic material based on metal-semiconductor composite structure and preparation method and magnetic field auxiliary application of photocatalytic material
  • Photocatalytic material based on metal-semiconductor composite structure and preparation method and magnetic field auxiliary application of photocatalytic material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Preparation of photocatalytic materials with Au nanorod-semiconductor CdS core-shell structure:

[0042] (1) Synthesis of Au nanorods:

[0043] a Place 90 microliters of chloroauric acid solution (10g / L) in 10ml of cetyltrimethylammonium bromide CTAB (1mol / L), and add 2 mg of sodium borohydride to reduce it to form Au seed crystals;

[0044] b Provide 1000ml of 1mol / L CTAB solution, add 1.92ml of silver nitrate solution (0.1mol / L), 4ml of chloroauric acid, 0.512ml of ascorbic acid (0.1mol / L) and 320 microliters of Au seed crystal, by adding the amount of ascorbic acid Adjust the morphology of Au nanoparticles and place them at room temperature for 12 hours to obtain Au nanorods;

[0045] (2) Synthesis of Au nanorod-semiconductor CdS core-shell structure photocatalytic material:

[0046]According to the ratio of cadmium thiobenzyl: the mass ratio of Au nanorods is 10:1, cadmium thiobenzyl is added to the CTAB solution of Au nanorods (the concentration of CTAB solution ...

Embodiment 2

[0050] Preparation of photocatalytic materials with Au nanoparticles-semiconductor CdS core-shell structure:

[0051] (1) Synthesis of Au nanoparticles:

[0052] a Place 90 microliters of chloroauric acid solution (10g / L) in 10ml of cetyltrimethylammonium bromide CTAB (1mol / L), and add 2 mg of sodium borohydride to reduce it to form Au seed crystals;

[0053] b Provide 1000ml of 1mol / L CTAB solution, add 1.92ml of silver nitrate solution (0.1mol / L), 4ml of chloroauric acid, 0.512ml of ascorbic acid (0.2mol / L) and 320 microliters of Au seed crystal, by adding the amount of ascorbic acid Adjust the morphology of Au nanoparticles and place them at room temperature for 12 hours to obtain Au nanoparticles;

[0054] (2) Synthesis of Au nanoparticles-semiconductor CdS core-shell structure photocatalytic material:

[0055] According to the ratio of cadmium thiobenzyl: the mass ratio of Au nanoparticles is 10:1, cadmium thiobenzyl is added to the Au nanorod CTAB solution (the concent...

Embodiment 3

[0059] Preparation of silver nanowire-semiconductor CdS photocatalytic material:

[0060] According to the ratio of cadmium thiobenzyl: the mass ratio of silver nanowires is 10:1, cadmium thiobenzyl is added to the silver nanowire CTAB solution (the concentration of CTAB solution is 0.1mol / L), and 20 microliters Silver nitrate solution (concentration 0.1mol / L), hydrothermal reaction at 140°C for 3 hours, so that the semiconductor photocatalyst is evenly coated on the metal surface, and the synthetic silver nanowire-semiconductor CdS photocatalytic material is obtained.

[0061] Application of silver nanowire-semiconductor CdS photocatalytic material:

[0062] Disperse 1mg of silver nanowire-semiconductor CdS photocatalytic material in water, add sodium sulfate and sodium sulfite, under the magnetic field strength 0.005-0.2T, rotation speed 100-350rpm, light intensity 60-180mW / cm 2 The photocatalytic water splitting reaction assisted by a magnetic field was carried out under a...

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Abstract

The invention relates to a photocatalytic material based on a metal-semiconductor composite structure and a preparation method and magnetic field auxiliary application of the photocatalytic material. Metal (gold (Au) nanorods, nanoparticles, silver (Ag) nanowires, molybdenum (Mo) nanosheets and the like) of different morphologies and semiconductor photocatalyst cadmium sulfide nanoparticles are constructed to obtain the photocatalytic material of a metal / semiconductor composite structure, the photocatalytic material is assisted by an external magnetic field, induced potential is generated in a metal conductor by cutting magnetic induction lines in the magnetic field, therefore, the separation of semiconductor photon-generated carriers is promoted, and the photocatalytic performance of the semiconductor is improved.

Description

technical field [0001] The invention relates to a photocatalytic material based on a metal-semiconductor composite structure, a preparation method thereof and a magnetic field auxiliary application, and belongs to the technical field of photocatalytic materials. Background technique [0002] Semiconductor photocatalysts are a sustainable technology with great potential to realize the conversion from solar energy to chemical energy. Preparation of photocatalysts with highly efficient photocatalytic performance is still an active research area. In addition to improving light absorption, suppressing the recombination of photogenerated carriers is currently a great challenge. In general, the construction of a built-in electric field in photocatalysts is a key strategy to suppress the recombination of photogenerated charges and facilitate the transport of carriers. The most important method to achieve this goal is to construct a semiconductor heterojunction based on the matchin...

Claims

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Application Information

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IPC IPC(8): B01J27/04B01J27/051B01J35/00C01B3/04
CPCB01J27/04B01J27/051C01B3/042B01J35/39B01J35/397Y02E60/36
Inventor 桑元华高文强王晓宁崔超赵晓蕾张珊王书华王建军刘宏
Owner SHANDONG UNIV