A microwave plasma processing device

A technology of microwave plasma and processing equipment, applied in metal material coating process, coating, gaseous chemical plating, etc., can solve problems such as heat loss, uneven edges that meet uniformity requirements, and waste of production resources. Achieve uniform edge and achieve temperature uniformity
CN113151809BActive Publication Date: 2022-07-22SHANGHAI ZHENGSHI TECH CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI ZHENGSHI TECH CO LTD
Publication Date
2022-07-22

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a microwave plasma processing device, comprising a microwave source, a microwave circulator, a power regulator, a rectangular waveguide, a tuner, an antenna, a reaction box, a gas mixing system, and a vacuum system. The microwave source is connected to the microwave circulator, and the microwave The exit end of the circulator is connected to the rectangular waveguide, and the power conditioner is connected to the exit end of the microwave circulator and the microwave source respectively. The power conditioner adjusts the excitation power of the microwave source according to the microwave output power. A tuner is set on the side wall of the rectangular waveguide, and the reaction box is installed in the rectangular waveguide. On the side of the end of the waveguide, the antenna is inserted into the rectangular waveguide and the top of the reaction box, the gas mixing system injects the working medium gas into the reaction box, and the vacuum system evacuates the reaction box and maintains a vacuum state; the plasma cloud in the reaction box is subjected to electromagnetic force. Inner loop.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of microwave plasma processing, in particular to a microwave plasma processing device. Background technique

[0002] Microwave plasma processing is an emerging special processing method. Microwave plasma has high ionization degree, high electron temperature, electron density, and there is no electrode contamination. The plasma is properly controlled and will not cause pollution on the microwave path. Therefore, it is widely used in the industrial manufacture of diamond films.

[0003] Plasma is cloud-like, also known as plasma cloud. In the vapor deposition process, the plasma cloud needs to be kept in a high temperature state. Once the temperature drops, the ionization decreases significantly, and the composition changes from the plasma state to the conventional gas molecule state. It is conducive to the deposition and formation of diamond film, and this effect mostly occurs at the edge of the plasma cloud...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More